Dynamics of processes during the deposition of ZrO2 films by controlled reactive high-power impulse magnetron sputtering: A modelling study
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F17%3A43932161" target="_blank" >RIV/49777513:23520/17:43932161 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1063/1.4996186" target="_blank" >http://dx.doi.org/10.1063/1.4996186</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4996186" target="_blank" >10.1063/1.4996186</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Dynamics of processes during the deposition of ZrO2 films by controlled reactive high-power impulse magnetron sputtering: A modelling study
Popis výsledku v původním jazyce
A time-dependent parametric model was applied to controlled reactive high-power impulse magnetron sputtering (HiPIMS) depositions of stoichiometric ZrO2 films, carried out in our laboratories, (i) to clarify the complicated dynamics of the processes on the target and substrate surfaces during voltage pulses, and (ii) to corroborate the importance of the O2 inlet configuration (position and direction) which strongly affects the O2 dissociation in the discharge and the chemisorption flux of oxygen atoms and molecules onto the substrate. For the experimental conditions with the to-substrate O2 inlets, the deposition-averaged target power density of 50 W/cm^2, and the oxygen partial pressure of 0.05 Pa (being close to the mean value during controlled depositions), our model predicts a low compound fraction, changing between 8% and 12%, in the target surface layer at an almost constant high compound fraction, changing between 92% and 93%, in the substrate surface layer during the pulse period (2000 μs). The calculated deposition rate of 89 nm/min for these films is in good agreement with the measured value of 80 nm/min achieved for optically transparent stoichiometric ZrO2 films prepared under these conditions.
Název v anglickém jazyce
Dynamics of processes during the deposition of ZrO2 films by controlled reactive high-power impulse magnetron sputtering: A modelling study
Popis výsledku anglicky
A time-dependent parametric model was applied to controlled reactive high-power impulse magnetron sputtering (HiPIMS) depositions of stoichiometric ZrO2 films, carried out in our laboratories, (i) to clarify the complicated dynamics of the processes on the target and substrate surfaces during voltage pulses, and (ii) to corroborate the importance of the O2 inlet configuration (position and direction) which strongly affects the O2 dissociation in the discharge and the chemisorption flux of oxygen atoms and molecules onto the substrate. For the experimental conditions with the to-substrate O2 inlets, the deposition-averaged target power density of 50 W/cm^2, and the oxygen partial pressure of 0.05 Pa (being close to the mean value during controlled depositions), our model predicts a low compound fraction, changing between 8% and 12%, in the target surface layer at an almost constant high compound fraction, changing between 92% and 93%, in the substrate surface layer during the pulse period (2000 μs). The calculated deposition rate of 89 nm/min for these films is in good agreement with the measured value of 80 nm/min achieved for optically transparent stoichiometric ZrO2 films prepared under these conditions.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10305 - Fluids and plasma physics (including surface physics)
Návaznosti výsledku
Projekt
<a href="/cs/project/GJ15-00859Y" target="_blank" >GJ15-00859Y: Design nových funkčních materiálů, a cest pro jejich přípravu atom po atomu, pomocí pokročilého počítačového modelování</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2017
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
—
Svazek periodika
122
Číslo periodika v rámci svazku
4
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
9
Strana od-do
„043304-1“-„043304-9“
Kód UT WoS článku
000409414100022
EID výsledku v databázi Scopus
2-s2.0-85026547567