Controlled reactive HiPIMS - effective technique for low-temperature (300 °C) synthesis of VO2 films with semiconductor-to-metal transition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F17%3A43932218" target="_blank" >RIV/49777513:23520/17:43932218 - isvavai.cz</a>

Výsledek na webu

<a href="http://doi.org/10.1088/1361-6463/aa8356" target="_blank" >http://doi.org/10.1088/1361-6463/aa8356</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6463/aa8356" target="_blank" >10.1088/1361-6463/aa8356</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Controlled reactive HiPIMS - effective technique for low-temperature (300 °C) synthesis of VO2 films with semiconductor-to-metal transition

Popis výsledku v původním jazyce

Reactive high-power impulse magnetron sputtering (HiPIMS) with a pulsed O2 flow control and to-substrate O2 injection into a high-density plasma in front of the sputtered vanadium target was used for low-temperature (300 °C) deposition of VO2 films with a pronounced semiconductor-to-metal transition onto conventional soda-lime glass substrates without any substrate bias voltage and without any interlayer. The deposition-averaged target power density was close to 13 W/cm^2 at a fixed duty cycle of 1% with a peak target power density up to 5 kW/cm^2 during voltage pulses ranged from 40 µs to 100 µs. A high modulation of the transmittance at 2500 nm (between 51% and 8% at the film thickness of 88 nm) and the electrical resistivity (changed 350 times) at the transition temperature of 56–57 °C was achieved for the VO2 films synthesized using 50 µs voltage pulses when the crystallization of the thermochromic VO2(M1) phase was supported by the high-energy (up to 50 eV relative to ground potential) ions.

Název v anglickém jazyce

Controlled reactive HiPIMS - effective technique for low-temperature (300 °C) synthesis of VO2 films with semiconductor-to-metal transition

Popis výsledku anglicky

Reactive high-power impulse magnetron sputtering (HiPIMS) with a pulsed O2 flow control and to-substrate O2 injection into a high-density plasma in front of the sputtered vanadium target was used for low-temperature (300 °C) deposition of VO2 films with a pronounced semiconductor-to-metal transition onto conventional soda-lime glass substrates without any substrate bias voltage and without any interlayer. The deposition-averaged target power density was close to 13 W/cm^2 at a fixed duty cycle of 1% with a peak target power density up to 5 kW/cm^2 during voltage pulses ranged from 40 µs to 100 µs. A high modulation of the transmittance at 2500 nm (between 51% and 8% at the film thickness of 88 nm) and the electrical resistivity (changed 350 times) at the transition temperature of 56–57 °C was achieved for the VO2 films synthesized using 50 µs voltage pulses when the crystallization of the thermochromic VO2(M1) phase was supported by the high-energy (up to 50 eV relative to ground potential) ions.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/GA17-08944S" target="_blank" >GA17-08944S: Nanostrukturní povlaky syntetizované užitím vysoce reaktivního pulzního plazmatu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

JOURNAL OF PHYSICS D-APPLIED PHYSICS

ISSN

0022-3727

e-ISSN

—

Svazek periodika

50

Číslo periodika v rámci svazku

38

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

„38LT01-1“-„38LT01-6“

Kód UT WoS článku

000408747400001

EID výsledku v databázi Scopus

2-s2.0-85028923959