HIGH-RATE REACTIVE SPUTTERING OF DIELECTRIC STOICHIOMETRIC FILMS

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F17%3A43949821" target="_blank" >RIV/49777513:23520/17:43949821 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

HIGH-RATE REACTIVE SPUTTERING OF DIELECTRIC STOICHIOMETRIC FILMS

Popis výsledku v původním jazyce

The present invention overcomes the well-known problems of reactive magnetron sputtering, even when high power impulse magnetron sputtering a metal target is used, by providing a reactive sputtering processing system and method that controls a pulsed reactive gas flow rate into a vacuum chamber at a constant target voltage, kept by a power supply, to promote a high-rate deposition of dielectric stoichiometric films in a transition region between a metallic mode and a covered (poisoned) mode. For a given target material and reactive process gas, one of the two process parameters (namely, the target current, alternatively the average target current in a period of a pulsed power supply, or the reactive gas partial pressure in the vacuum chamber), which are simultaneously monitored in time by a process controller, is selected as a control process parameter. For a given nominal target power, and the target material and the reactive process gas, an optimized constant target voltage, non-reactive gas (argon) partial pressure, total reactive gas flow rate into the vacuum chamber and configuration of the reactive gas conduit system, together with a critical value of the control process parameter selected, are determined empirically using the apparatus controlling the reactive sputtering process on the basis of the sensed time-dependent values of the control parameter. This determination is based on measurements of the deposition rates and characterization of the films deposited. The critical value of the control parameter defines a range of the reactive gas partial pressure in the chamber through the controlled pulsed reactive gas flow rate into the chamber allowing to perform a stabilized high-rate reactive magnetron deposition of dielectric stoichiometric films in a transition region between a metallic mode and a covered (poisoned) mode.

Název v anglickém jazyce

HIGH-RATE REACTIVE SPUTTERING OF DIELECTRIC STOICHIOMETRIC FILMS

Popis výsledku anglicky

The present invention overcomes the well-known problems of reactive magnetron sputtering, even when high power impulse magnetron sputtering a metal target is used, by providing a reactive sputtering processing system and method that controls a pulsed reactive gas flow rate into a vacuum chamber at a constant target voltage, kept by a power supply, to promote a high-rate deposition of dielectric stoichiometric films in a transition region between a metallic mode and a covered (poisoned) mode. For a given target material and reactive process gas, one of the two process parameters (namely, the target current, alternatively the average target current in a period of a pulsed power supply, or the reactive gas partial pressure in the vacuum chamber), which are simultaneously monitored in time by a process controller, is selected as a control process parameter. For a given nominal target power, and the target material and the reactive process gas, an optimized constant target voltage, non-reactive gas (argon) partial pressure, total reactive gas flow rate into the vacuum chamber and configuration of the reactive gas conduit system, together with a critical value of the control process parameter selected, are determined empirically using the apparatus controlling the reactive sputtering process on the basis of the sensed time-dependent values of the control parameter. This determination is based on measurements of the deposition rates and characterization of the films deposited. The critical value of the control parameter defines a range of the reactive gas partial pressure in the chamber through the controlled pulsed reactive gas flow rate into the chamber allowing to perform a stabilized high-rate reactive magnetron deposition of dielectric stoichiometric films in a transition region between a metallic mode and a covered (poisoned) mode.

Druh

P - Patent

CEP obor

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OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Číslo patentu nebo vzoru

US9637814

Vydavatel

US001 -

Název vydavatele

United States Patent and Trademark Office (USPTO)

Místo vydání

Alexandria

Stát vydání

US - Spojené státy americké

Datum přijetí

2. 5. 2017

Název vlastníka

Západočeská univerzita v Plzni, TRUMPF Huettinger Sp. Z o. o.

Způsob využití

B - Výsledek je využíván orgány státní nebo veřejné správy

Druh možnosti využití

A - K využití výsledku jiným subjektem je vždy nutné nabytí licence