In-Ga-Zn-O thin films with tunable optical and electrical properties prepared by high-power impulse magnetron sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F18%3A43951200" target="_blank" >RIV/49777513:23520/18:43951200 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.tsf.2018.05.029" target="_blank" >https://doi.org/10.1016/j.tsf.2018.05.029</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2018.05.029" target="_blank" >10.1016/j.tsf.2018.05.029</a>

Jazyk výsledku

angličtina

Název v původním jazyce

In-Ga-Zn-O thin films with tunable optical and electrical properties prepared by high-power impulse magnetron sputtering

Popis výsledku v původním jazyce

Reactive high-power impulse magnetron sputtering (HiPIMS) was used for deposition of amorphous In−Ga−Zn−O films at low substrate temperature (&lt; 70 °C). The depositions were performed using a strongly unbalanced magnetron equipped with a ceramic In2Ga2ZnO7 target (100mm in diameter). Films were prepared at a constant argon pressure of 1 Pa on standard soda-lime glass at a target-to-substrate distance of 100 mm. The effect of pulse-averaged target power density (in the range 100–1020 W/cm^2 at a constant average target power density of 5 W/cm^2) is discussed for two series of films: with and without admixed O2 into the discharge. Obtained results show that the value of the pulse-averaged target power density is an effective parameter for tuning of electrical and optical properties of the films. The films prepared without admixed O2 exhibit increasing optical transparency and Hall mobility with an increasing value of the pulse-averaged target power density whereas the electrical resistivity is in the range ~ 0.1–10 Ω.cm as a result of an increasing oxygen film concentration. The admixed O2 into the plasma discharge strongly influenced the chemical composition of the films which is in this case invariant to value of the pulse-averaged target power density. However, in this case, there is a rapid increase of the film resistivity (from ~ 1 Ω.cm to 1 MΩ.cm) with an increasing pulse-averaged target power density whereas all films are highly optically transparent (extinction coefficient at the wavelength of 550 nm ≤ 0.009 ). Various mechanisms responsible for the different behaviors of these two series are also discussed.

Název v anglickém jazyce

In-Ga-Zn-O thin films with tunable optical and electrical properties prepared by high-power impulse magnetron sputtering

Popis výsledku anglicky

Reactive high-power impulse magnetron sputtering (HiPIMS) was used for deposition of amorphous In−Ga−Zn−O films at low substrate temperature (&lt; 70 °C). The depositions were performed using a strongly unbalanced magnetron equipped with a ceramic In2Ga2ZnO7 target (100mm in diameter). Films were prepared at a constant argon pressure of 1 Pa on standard soda-lime glass at a target-to-substrate distance of 100 mm. The effect of pulse-averaged target power density (in the range 100–1020 W/cm^2 at a constant average target power density of 5 W/cm^2) is discussed for two series of films: with and without admixed O2 into the discharge. Obtained results show that the value of the pulse-averaged target power density is an effective parameter for tuning of electrical and optical properties of the films. The films prepared without admixed O2 exhibit increasing optical transparency and Hall mobility with an increasing value of the pulse-averaged target power density whereas the electrical resistivity is in the range ~ 0.1–10 Ω.cm as a result of an increasing oxygen film concentration. The admixed O2 into the plasma discharge strongly influenced the chemical composition of the films which is in this case invariant to value of the pulse-averaged target power density. However, in this case, there is a rapid increase of the film resistivity (from ~ 1 Ω.cm to 1 MΩ.cm) with an increasing pulse-averaged target power density whereas all films are highly optically transparent (extinction coefficient at the wavelength of 550 nm ≤ 0.009 ). Various mechanisms responsible for the different behaviors of these two series are also discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/LO1506" target="_blank" >LO1506: Podpora udržitelnosti centra NTIS - Nové technologie pro informační společnost</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

658

Číslo periodika v rámci svazku

31 July 2018

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

6

Strana od-do

27-32

Kód UT WoS článku

000433425200005

EID výsledku v databázi Scopus

2-s2.0-85047092612