High-rate reactive high-power impulse magnetron sputtering of transparent conductive Al-doped ZnO thin films prepared at ambient temperature

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F19%3A43954934" target="_blank" >RIV/49777513:23520/19:43954934 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23640/19:43954934

Výsledek na webu

<a href="https://doi.org/10.1016/j.tsf.2019.04.009" target="_blank" >https://doi.org/10.1016/j.tsf.2019.04.009</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.tsf.2019.04.009" target="_blank" >10.1016/j.tsf.2019.04.009</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-rate reactive high-power impulse magnetron sputtering of transparent conductive Al-doped ZnO thin films prepared at ambient temperature

Popis výsledku v původním jazyce

Reactive high-power impulse magnetron sputtering was used for high-rate (deposition rate of 60 nm/min) deposition of conductive (resistivity of 0.003 Ω·cm) and optically transparent (extinction coefficient at the wavelength of 550 nm of 0.01) ZnO:Al thin films at ambient temperature (&lt; 40 °C). We used planar Zn:Al target (3.09 at.% of Al) with diameter of 100 mm and thickness of 6 mm mounted on strongly unbalanced magnetron. The films were deposited in argon‑oxygen atmosphere at constant argon and oxygen partial pressure of 2.0 Pa and 0.1 Pa, respectively. An average target power and voltage pulse length were kept constant to 1.9 W/cm^2 and 200 µs, respectively. A pulse-averaged target power density was varied in the range of 190–940 W/cm^2. Optical emission spectroscopy was used for better understanding of correlations between plasma discharge properties and structural, electrical and optical properties of prepared films.

Název v anglickém jazyce

High-rate reactive high-power impulse magnetron sputtering of transparent conductive Al-doped ZnO thin films prepared at ambient temperature

Popis výsledku anglicky

Reactive high-power impulse magnetron sputtering was used for high-rate (deposition rate of 60 nm/min) deposition of conductive (resistivity of 0.003 Ω·cm) and optically transparent (extinction coefficient at the wavelength of 550 nm of 0.01) ZnO:Al thin films at ambient temperature (&lt; 40 °C). We used planar Zn:Al target (3.09 at.% of Al) with diameter of 100 mm and thickness of 6 mm mounted on strongly unbalanced magnetron. The films were deposited in argon‑oxygen atmosphere at constant argon and oxygen partial pressure of 2.0 Pa and 0.1 Pa, respectively. An average target power and voltage pulse length were kept constant to 1.9 W/cm^2 and 200 µs, respectively. A pulse-averaged target power density was varied in the range of 190–940 W/cm^2. Optical emission spectroscopy was used for better understanding of correlations between plasma discharge properties and structural, electrical and optical properties of prepared films.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

—

Svazek periodika

679

Číslo periodika v rámci svazku

1 Jun 2019

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

35-41

Kód UT WoS článku

000466096600006

EID výsledku v databázi Scopus

2-s2.0-85064160934