Formation on Ti1-xSix and Ti1-xSixN films by magnetron co-sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F99%3A00039127" target="_blank" >RIV/49777513:23520/99:00039127 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Formation on Ti1-xSix and Ti1-xSixN films by magnetron co-sputtering

Popis výsledku v původním jazyce

The paper reports on surface morphology, structure and microhardness of TiSi-N films formed by cosputtering from two target-facing unbalanced magnetrons, equipped with pure Ti and Si targets, on an unheated substrate rotating in front of both targets. Thratio Si/Ti in the TiSi-N film was achieved by modifying the magnitude of currents in the individual magnetrons and by the addition of nitrogen to the film. The rotation of the substrate has a strong effect on the film deposition rate and its morphology.The deposition rate is 3 times lower than that of the film deposited on a stationary substrate. The surface roughness of a polycrystalline Ti film deposited on the rotating substrate is considerably higher than that on a stationary substrate. On the contrary, the surface of an amorphous Si film is smooth and there no difference between the roughness of Si films sputtered on stationary and on rotating substrates.

Název v anglickém jazyce

Formation on Ti1-xSix and Ti1-xSixN films by magnetron co-sputtering

Popis výsledku anglicky

The paper reports on surface morphology, structure and microhardness of TiSi-N films formed by cosputtering from two target-facing unbalanced magnetrons, equipped with pure Ti and Si targets, on an unheated substrate rotating in front of both targets. Thratio Si/Ti in the TiSi-N film was achieved by modifying the magnitude of currents in the individual magnetrons and by the addition of nitrogen to the film. The rotation of the substrate has a strong effect on the film deposition rate and its morphology.The deposition rate is 3 times lower than that of the film deposited on a stationary substrate. The surface roughness of a polycrystalline Ti film deposited on the rotating substrate is considerably higher than that on a stationary substrate. On the contrary, the surface of an amorphous Si film is smooth and there no difference between the roughness of Si films sputtered on stationary and on rotating substrates.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

1999

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Czechoslovak Journal of Physics

ISSN

00114626

e-ISSN

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Svazek periodika

Roč.^49

Číslo periodika v rámci svazku

č.^3

Stát vydavatele periodika

CZ - Česká republika

Počet stran výsledku

14

Strana od-do

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Kód UT WoS článku

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EID výsledku v databázi Scopus

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