Low peak power deposition regime in HiPIMS: Deposition of hard and dense nanocomposite Ti-Si-N films by DOMS without the need of energetic bombardment
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00343445" target="_blank" >RIV/68407700:21230/20:00343445 - isvavai.cz</a>
Výsledek na webu
<a href="https://doi.org/10.1016/j.surfcoat.2020.125996" target="_blank" >https://doi.org/10.1016/j.surfcoat.2020.125996</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.surfcoat.2020.125996" target="_blank" >10.1016/j.surfcoat.2020.125996</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Low peak power deposition regime in HiPIMS: Deposition of hard and dense nanocomposite Ti-Si-N films by DOMS without the need of energetic bombardment
Popis výsledku v původním jazyce
Nanocomposite Ti-Si-N thin films have been extensively studied for more than two decades mainly for the production of super hard materials. However, recently, several authors have shown that the use of HiPIMS in Ti-Si-N deposition bring about new opportunities for optimization of the films properties. HiPIMS allows for markedly different film growth pathways depending on the deposition conditions. In a previous work, regarding the deposition of Ti-Si-N films by DOMS (Deep Oscillation Magnetron Sputtering), authors also showed that, at low peak power, a unique optimal compromise of ionization fraction and energy of the sputtered species can be achieved. The main objective of the present work is to further investigate the low peak power regime in the deposition of Ti-Si-N films by DOMS. For this purpose, Ti-Si-N films with a Si content of 7 at.% were deposited by DOMS using a similar configuration as in our previous work but with fewer Si pellets placed on the Ti target in order to achieve a lower Si content.
Název v anglickém jazyce
Low peak power deposition regime in HiPIMS: Deposition of hard and dense nanocomposite Ti-Si-N films by DOMS without the need of energetic bombardment
Popis výsledku anglicky
Nanocomposite Ti-Si-N thin films have been extensively studied for more than two decades mainly for the production of super hard materials. However, recently, several authors have shown that the use of HiPIMS in Ti-Si-N deposition bring about new opportunities for optimization of the films properties. HiPIMS allows for markedly different film growth pathways depending on the deposition conditions. In a previous work, regarding the deposition of Ti-Si-N films by DOMS (Deep Oscillation Magnetron Sputtering), authors also showed that, at low peak power, a unique optimal compromise of ionization fraction and energy of the sputtered species can be achieved. The main objective of the present work is to further investigate the low peak power regime in the deposition of Ti-Si-N films by DOMS. For this purpose, Ti-Si-N films with a Si content of 7 at.% were deposited by DOMS using a similar configuration as in our previous work but with fewer Si pellets placed on the Ti target in order to achieve a lower Si content.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
20506 - Coating and films
Návaznosti výsledku
Projekt
<a href="/cs/project/EF18_070%2F0010457" target="_blank" >EF18_070/0010457: Mezinárodní mobility výzkumných pracovníků MSCA-IF II na ČVUT v Praze</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Surface & Coatings Technology
ISSN
0257-8972
e-ISSN
1879-3347
Svazek periodika
397
Číslo periodika v rámci svazku
September
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
12
Strana od-do
—
Kód UT WoS článku
000543496400029
EID výsledku v databázi Scopus
2-s2.0-85085840337