Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43915286" target="_blank" >RIV/49777513:23640/12:43915286 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1051/epjpv/2012006" target="_blank" >http://dx.doi.org/10.1051/epjpv/2012006</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1051/epjpv/2012006" target="_blank" >10.1051/epjpv/2012006</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films

Popis výsledku v původním jazyce

Thin films of gallium-doped zinc oxide (ZnO:Ga) were deposited on Corning glass substrates by rf diode sputtering and then implanted with 180 keV nitrogen ions in the dose range of 1x10^15 -2x10^16 cm?2. After the ion implantation, the films were annealed under oxygen and nitrogen ambient, at different temperatures and time, and the effect on their microstructure, type and range of conductivity, and optical properties was investigated. Post-implantation annealing at 550°C resulted in n-type conductivityfilms with the highest electron concentration of 1.4x10^20 cm?3. It was found that the annealing parameters had a profound impact on the film's properties. A p-type conductivity (a hole concentration of 2.8x10^19 cm?3, mobility of 0.6 cm2/(V s) was observed in a sample implanted with 1 x 10^16 cm?2 after a rapid thermal annealing (RTA) in N2 at 400°C. Optical transmittance of all films was }84% in the wavelength range of 390-1100 nm. The SIMS depth profile of the complex 30NO? ions repr

Název v anglickém jazyce

Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films

Popis výsledku anglicky

Thin films of gallium-doped zinc oxide (ZnO:Ga) were deposited on Corning glass substrates by rf diode sputtering and then implanted with 180 keV nitrogen ions in the dose range of 1x10^15 -2x10^16 cm?2. After the ion implantation, the films were annealed under oxygen and nitrogen ambient, at different temperatures and time, and the effect on their microstructure, type and range of conductivity, and optical properties was investigated. Post-implantation annealing at 550°C resulted in n-type conductivityfilms with the highest electron concentration of 1.4x10^20 cm?3. It was found that the annealing parameters had a profound impact on the film's properties. A p-type conductivity (a hole concentration of 2.8x10^19 cm?3, mobility of 0.6 cm2/(V s) was observed in a sample implanted with 1 x 10^16 cm?2 after a rapid thermal annealing (RTA) in N2 at 400°C. Optical transmittance of all films was }84% in the wavelength range of 390-1100 nm. The SIMS depth profile of the complex 30NO? ions repr

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centrum nových technologií a materiálů (CENTEM)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů