Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43916042" target="_blank" >RIV/49777513:23640/12:43916042 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1149/2.003206jss" target="_blank" >http://dx.doi.org/10.1149/2.003206jss</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1149/2.003206jss" target="_blank" >10.1149/2.003206jss</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation

Popis výsledku v původním jazyce

The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin ?lms prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10^15 and 1 x 10^16 cm?2 to achieve a p-type semiconductor. An implantation of 1 x 10^15 cm?2 N+-ions yielded a p-type with hole concentrations 10^17-10^18 cm-3 in some as-implanted samples. The ?lms annealed at temperatures above 200?C in O2 and above 400?C in N2 were n-type with electron concentrations 10^17-10^20 cm? 3. The higher nitrogen concentration (con?rmed by SRIM and SIMS), in the ?lms implanted with a 1 x 10^16cm-2 dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors bynitrogen acceptors.

Název v anglickém jazyce

Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation

Popis výsledku anglicky

The electrical characteristics of gallium-doped zinc oxide (ZnO:Ga) thin ?lms prepared by rf diode sputtering were altered via nitrogen implantation by performing two implants at 40 keV and 80 keV with doses of 1 x 10^15 and 1 x 10^16 cm?2 to achieve a p-type semiconductor. An implantation of 1 x 10^15 cm?2 N+-ions yielded a p-type with hole concentrations 10^17-10^18 cm-3 in some as-implanted samples. The ?lms annealed at temperatures above 200?C in O2 and above 400?C in N2 were n-type with electron concentrations 10^17-10^20 cm? 3. The higher nitrogen concentration (con?rmed by SRIM and SIMS), in the ?lms implanted with a 1 x 10^16cm-2 dose, resulted in lower electron concentrations, respectively, higher resistivity, due to compensation of donors bynitrogen acceptors.

Druh

O - Ostatní výsledky

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centrum nových technologií a materiálů (CENTEM)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů