Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43916611" target="_blank" >RIV/49777513:23640/12:43916611 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications

Popis výsledku v původním jazyce

In this paper, we used thermal annealing for fabrication size controlled silicon nanostructures from amorphous a-Si:H/SiO2 multilayers. A series of multilayers were deposited by PECVD using SiH4 and N2O as precursor gases. Films composed of alternating uniformly thick (20, 15, 10 and 5 nm) sublayers of a-Si:H and SiO2 were prepared on Corning glass and Si(100) substrate. Subsequently, all as-deposited multilayered films were annealed in vacuum up to 1100 °C to initialize recrystallization and formationof Si nanograins. The influence of the annealing temperature on the structural and optical properties of films were systematically studied by using XRD, FT-IR, Raman, UV-Vis spectrophotometer and ellipsometry. In FT-IR spectra, the shift of the Si-O stretching vibration to higher wavenumbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. Raman scattering spectra revealed mixed states of small crystalline grain

Název v anglickém jazyce

Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications

Popis výsledku anglicky

In this paper, we used thermal annealing for fabrication size controlled silicon nanostructures from amorphous a-Si:H/SiO2 multilayers. A series of multilayers were deposited by PECVD using SiH4 and N2O as precursor gases. Films composed of alternating uniformly thick (20, 15, 10 and 5 nm) sublayers of a-Si:H and SiO2 were prepared on Corning glass and Si(100) substrate. Subsequently, all as-deposited multilayered films were annealed in vacuum up to 1100 °C to initialize recrystallization and formationof Si nanograins. The influence of the annealing temperature on the structural and optical properties of films were systematically studied by using XRD, FT-IR, Raman, UV-Vis spectrophotometer and ellipsometry. In FT-IR spectra, the shift of the Si-O stretching vibration to higher wavenumbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. Raman scattering spectra revealed mixed states of small crystalline grain

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centrum nových technologií a materiálů (CENTEM)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Progress in Applied Surface, Inteface and Thin Film Science 2012, SURFINT -SREN III

ISBN

978-80-223-3212-5

ISSN

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e-ISSN

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Počet stran výsledku

2

Strana od-do

97-98

Název nakladatele

Univerzita Komenského Bratislava

Místo vydání

Bratislava

Místo konání akce

Florence, Italie

Datum konání akce

14. 5. 2012

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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