Pulsed laser deposition of thin films on actively cooled substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F13%3A43918866" target="_blank" >RIV/49777513:23640/13:43918866 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.vacuum.2013.01.024" target="_blank" >http://dx.doi.org/10.1016/j.vacuum.2013.01.024</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2013.01.024" target="_blank" >10.1016/j.vacuum.2013.01.024</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Pulsed laser deposition of thin films on actively cooled substrates

Popis výsledku v původním jazyce

The paper deals with a special arrangement of pulsed laser deposition (PLD) when the substrates were cooled at cryogenic temperatures by liquid nitrogen during the deposition process. Applied materials - zinc oxide and titanium dioxide - play an important role in current optoelectronics and sensor research and a comparative study of their behaviour in presented PLD arrangements were performed. Prepared films (deposited on different substrates: Si (100) and sapphire) were investigated in as-deposited states and their properties in dependence of deposition temperature were compared. Investigation by X-ray diffraction and Raman spectroscopy proved their amorphous structure. Subsequently, annealing under different temperatures (up to 800°C) was applied andproperties of modi?ed structures were compared by using different analytical methods (scanning electron microscopy, X-ray diffraction, Raman spectroscopy, optical absorption spectroscopy and spectroscopic ellipsometry).

Název v anglickém jazyce

Pulsed laser deposition of thin films on actively cooled substrates

Popis výsledku anglicky

The paper deals with a special arrangement of pulsed laser deposition (PLD) when the substrates were cooled at cryogenic temperatures by liquid nitrogen during the deposition process. Applied materials - zinc oxide and titanium dioxide - play an important role in current optoelectronics and sensor research and a comparative study of their behaviour in presented PLD arrangements were performed. Prepared films (deposited on different substrates: Si (100) and sapphire) were investigated in as-deposited states and their properties in dependence of deposition temperature were compared. Investigation by X-ray diffraction and Raman spectroscopy proved their amorphous structure. Subsequently, annealing under different temperatures (up to 800°C) was applied andproperties of modi?ed structures were compared by using different analytical methods (scanning electron microscopy, X-ray diffraction, Raman spectroscopy, optical absorption spectroscopy and spectroscopic ellipsometry).

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centrum nových technologií a materiálů (CENTEM)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Vacuum

ISSN

0042-207X

e-ISSN

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Svazek periodika

98

Číslo periodika v rámci svazku

December

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

56-62

Kód UT WoS článku

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EID výsledku v databázi Scopus

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