Structural analysis of silicon nanostructures obtained from thermal annealing of PVD deposited SRO/SiO2 multilayers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F19%3A43955567" target="_blank" >RIV/49777513:23640/19:43955567 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11025/35967" target="_blank" >http://hdl.handle.net/11025/35967</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2019.04.038" target="_blank" >10.1016/j.vacuum.2019.04.038</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structural analysis of silicon nanostructures obtained from thermal annealing of PVD deposited SRO/SiO2 multilayers

Popis výsledku v původním jazyce

We report the synthesis and characterization of silicon nanostructures obtained by thermal annealing of silicon-rich oxide/silicon dioxide (SRO/SiO2) multilayers deposited by magnetron sputtering in an argon and oxygen atmosphere. The main motivation to study silicon comes from its success and dominance in microelectronics. Light sources, modulators, waveguides, and logical gates are a few examples of microelectronic materials applications in the various photonic devices which have been developed based on silicon nanocrystals. SRO/SiO2 multilayers were deposited by 13.56 MHz radio-frequency magnetron sputtering. The as-deposited multilayers and the crystallized films were investigated using in-situ X-ray diffractometry (XRD), High-resolution transmission electron microscopy (HRTEM) and Secondary ion mass spectrometry (SIMS). Multilayers composed of alternating stacks of amorphous SRO and SiO2 layers were crystallized by thermal annealing in vacuum. The different stages from nucleation until full crystallization were investigated by in situ X-ray diffractometry. XRD in agreement with HRTEM confirmed the presence of silicon crystalline fraction in annealed films. It is calculated that there is 17-25% of crystalline volume fraction in the multilayers after the annealing procedure with density of particles of 2-2.8x1018cm-3. The crystalline fraction obtained consists of nanoparticles, whose average size is 3.5 – 5 nm.

Název v anglickém jazyce

Structural analysis of silicon nanostructures obtained from thermal annealing of PVD deposited SRO/SiO2 multilayers

Popis výsledku anglicky

We report the synthesis and characterization of silicon nanostructures obtained by thermal annealing of silicon-rich oxide/silicon dioxide (SRO/SiO2) multilayers deposited by magnetron sputtering in an argon and oxygen atmosphere. The main motivation to study silicon comes from its success and dominance in microelectronics. Light sources, modulators, waveguides, and logical gates are a few examples of microelectronic materials applications in the various photonic devices which have been developed based on silicon nanocrystals. SRO/SiO2 multilayers were deposited by 13.56 MHz radio-frequency magnetron sputtering. The as-deposited multilayers and the crystallized films were investigated using in-situ X-ray diffractometry (XRD), High-resolution transmission electron microscopy (HRTEM) and Secondary ion mass spectrometry (SIMS). Multilayers composed of alternating stacks of amorphous SRO and SiO2 layers were crystallized by thermal annealing in vacuum. The different stages from nucleation until full crystallization were investigated by in situ X-ray diffractometry. XRD in agreement with HRTEM confirmed the presence of silicon crystalline fraction in annealed films. It is calculated that there is 17-25% of crystalline volume fraction in the multilayers after the annealing procedure with density of particles of 2-2.8x1018cm-3. The crystalline fraction obtained consists of nanoparticles, whose average size is 3.5 – 5 nm.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Vacuum

ISSN

0042-207X

e-ISSN

—

Svazek periodika

166

Číslo periodika v rámci svazku

August 2019

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

5

Strana od-do

32-36

Kód UT WoS článku

000472990900006

EID výsledku v databázi Scopus

2-s2.0-85064917011