Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F20%3A43962441" target="_blank" >RIV/49777513:23640/20:43962441 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/20:00531704

Výsledek na webu

<a href="https://doi.org/10.3390/coatings10010002" target="_blank" >https://doi.org/10.3390/coatings10010002</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/coatings10010002" target="_blank" >10.3390/coatings10010002</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics

Popis výsledku v původním jazyce

Amorphous oxide semiconductors (AOSs) are interesting materials which combine optical transparency with high electron mobility. AOSs can be prepared at low temperatures by high throughput deposition techniques such as magnetron sputtering and are thus suitable for flexible transparent electronics such as flexible displays, thin-film transistors, and sensors. In magnetron sputtering the energy input into the growing film can be controlled by the plasma conditions instead of the substrate temperature. Here, we report on magnetron sputtering of InGaZnO (IGZO) and ZnSnO (ZTO) with a focus on the e ect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited a resistivity of about 2 10????2 Ohmcm and an electron mobility of 18 cm2V????1s????1. The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate.

Název v anglickém jazyce

Room Temperature Reactive Deposition of InGaZnO and ZnSnO Amorphous Oxide Semiconductors for Flexible Electronics

Popis výsledku anglicky

Amorphous oxide semiconductors (AOSs) are interesting materials which combine optical transparency with high electron mobility. AOSs can be prepared at low temperatures by high throughput deposition techniques such as magnetron sputtering and are thus suitable for flexible transparent electronics such as flexible displays, thin-film transistors, and sensors. In magnetron sputtering the energy input into the growing film can be controlled by the plasma conditions instead of the substrate temperature. Here, we report on magnetron sputtering of InGaZnO (IGZO) and ZnSnO (ZTO) with a focus on the e ect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited a resistivity of about 2 10????2 Ohmcm and an electron mobility of 18 cm2V????1s????1. The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Coatings

ISSN

2079-6412

e-ISSN

—

Svazek periodika

10

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

—

Kód UT WoS článku

000513694500027

EID výsledku v databázi Scopus

2-s2.0-85079060260