Room temperature reactive deposition of InGaZnO and ZnSnO amorphous oxide semiconductors for flexible electronics

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00531704" target="_blank" >RIV/68378271:_____/20:00531704 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23640/20:43962441

Výsledek na webu

<a href="http://hdl.handle.net/11104/0310321" target="_blank" >http://hdl.handle.net/11104/0310321</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/coatings10010002" target="_blank" >10.3390/coatings10010002</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Room temperature reactive deposition of InGaZnO and ZnSnO amorphous oxide semiconductors for flexible electronics

Popis výsledku v původním jazyce

We report on magnetron sputtering of amorphous oxide semiconductors, interesting materials combining optical transparency with high electron mobility. Namely, we studied InGaZnO (IGZO) and ZnSnO (ZTO) thin films with a focus on the effect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited an electron mobility of 18 cm2/Vs. The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate.

Název v anglickém jazyce

Room temperature reactive deposition of InGaZnO and ZnSnO amorphous oxide semiconductors for flexible electronics

Popis výsledku anglicky

We report on magnetron sputtering of amorphous oxide semiconductors, interesting materials combining optical transparency with high electron mobility. Namely, we studied InGaZnO (IGZO) and ZnSnO (ZTO) thin films with a focus on the effect of deposition conditions on the film properties. IGZO films were deposited by radio-frequency (RF) sputtering from an oxide target while for ZTO, reactive sputtering from an alloy target was used. All films were deposited without substrate heating and characterized with respect to microstructure, electron mobility, and resistivity. The best as-deposited IGZO films exhibited an electron mobility of 18 cm2/Vs. The lateral distribution of the electrical properties in such films is mainly related to the activity and amount of oxygen reaching the substrate surface as well as its spatial distribution. The lateral uniformity is strongly influenced by the composition and energy of the material flux towards the substrate.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Coatings

ISSN

2079-6412

e-ISSN

—

Svazek periodika

10

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

1-7

Kód UT WoS článku

000513694500027

EID výsledku v databázi Scopus

2-s2.0-85079060260