Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00481258" target="_blank" >RIV/68378271:_____/17:00481258 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/68407700:21230/17:00312022
Výsledek na webu
<a href="http://dx.doi.org/10.1103/PhysRevB.95.245204" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.95.245204</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.95.245204" target="_blank" >10.1103/PhysRevB.95.245204</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration
Popis výsledku v původním jazyce
The link between sub-bandgap states and optoelectronic properties is investigated for amorphous zinc tin oxide (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples were annealed up to 500 °C in oxidizing, neutral, and reducing atmospheres before characterizing their structural and optoelectronic properties by photothermal deflection spectroscopy, near-infrared-visible UV spectrophotometry, Hall effect, Rutherford backscattering, hydrogen forward scattering and transmission electron microscopy. By combining the experimental results with density functional theory calculations, oxygen deficiencies and resulting metal atoms clusters are identified as the source of subgap states, some of which act as electron donors but also as free electron scattering centers. The role of hydrogen on the optoelectronic properties is also discussed. An amorphous indium-free transparent conductive oxide, with a high thermal stability and an electron mobility up to 35cm^2/V/s, is demonstrated.
Název v anglickém jazyce
Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation: A theoretical and experimental demonstration
Popis výsledku anglicky
The link between sub-bandgap states and optoelectronic properties is investigated for amorphous zinc tin oxide (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples were annealed up to 500 °C in oxidizing, neutral, and reducing atmospheres before characterizing their structural and optoelectronic properties by photothermal deflection spectroscopy, near-infrared-visible UV spectrophotometry, Hall effect, Rutherford backscattering, hydrogen forward scattering and transmission electron microscopy. By combining the experimental results with density functional theory calculations, oxygen deficiencies and resulting metal atoms clusters are identified as the source of subgap states, some of which act as electron donors but also as free electron scattering centers. The role of hydrogen on the optoelectronic properties is also discussed. An amorphous indium-free transparent conductive oxide, with a high thermal stability and an electron mobility up to 35cm^2/V/s, is demonstrated.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Návaznosti výsledku
Projekt
<a href="/cs/project/GC16-10429J" target="_blank" >GC16-10429J: Optické, elektrické a magnetické vlastnosti ZnO nanostruktur</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2017
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Physical Review B
ISSN
2469-9950
e-ISSN
—
Svazek periodika
95
Číslo periodika v rámci svazku
24
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
9
Strana od-do
—
Kód UT WoS článku
000402973800004
EID výsledku v databázi Scopus
2-s2.0-85023177501