Differential Thickness Layer Resistance Measurement method for measurements of contact resistance of organic semiconductor thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F15%3A43900016" target="_blank" >RIV/60461373:22310/15:43900016 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/60461373:22340/15:43900016

Výsledek na webu

<a href="http://www.sciencedirect.com/science/article/pii/S0263224115003607" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0263224115003607</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.measurement.2015.07.025" target="_blank" >10.1016/j.measurement.2015.07.025</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Differential Thickness Layer Resistance Measurement method for measurements of contact resistance of organic semiconductor thin films

Popis výsledku v původním jazyce

The objective, basic theory and application of a new DTLRM (Differential Thickness Layer Resistance Measurement) method of contact resistance R-c (resistance of interface) and contact resistivity measurements are described. The method was developed for ultrathin films of high-ohmic organic semiconductors. The method is based on measurements of total resistance R-T,R-1, R-T,R-2 between two opposite planar contacts on two samples of differing thickness L-1, L-2 prepared from the same organic semiconductor. The important requirements are that both the opposite contacts are ohmic, that linear dimensions of the contacts are much larger than the film thickness, and that the actual measured data are consistent in the sense of condition 1 < R-T,R-2/R-T,R-1 < L-2/L-1. The DTLRM method was verified on zinc phthalocyanine samples with Au and Pt contacts. If the basic assumptions are fulfilled, the DTLRM method can be applied to a broad range of high-ohmic thin films.

Název v anglickém jazyce

Differential Thickness Layer Resistance Measurement method for measurements of contact resistance of organic semiconductor thin films

Popis výsledku anglicky

The objective, basic theory and application of a new DTLRM (Differential Thickness Layer Resistance Measurement) method of contact resistance R-c (resistance of interface) and contact resistivity measurements are described. The method was developed for ultrathin films of high-ohmic organic semiconductors. The method is based on measurements of total resistance R-T,R-1, R-T,R-2 between two opposite planar contacts on two samples of differing thickness L-1, L-2 prepared from the same organic semiconductor. The important requirements are that both the opposite contacts are ohmic, that linear dimensions of the contacts are much larger than the film thickness, and that the actual measured data are consistent in the sense of condition 1 < R-T,R-2/R-T,R-1 < L-2/L-1. The DTLRM method was verified on zinc phthalocyanine samples with Au and Pt contacts. If the basic assumptions are fulfilled, the DTLRM method can be applied to a broad range of high-ohmic thin films.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/GA14-10279S" target="_blank" >GA14-10279S: Pokročilé materiály pro fotovoltaiku: substituované ftalocyaninové organokomplexy</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Measurement

ISSN

0263-2241

e-ISSN

—

Svazek periodika

74

Číslo periodika v rámci svazku

October 2015

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

178-185

Kód UT WoS článku

000359954400020

EID výsledku v databázi Scopus

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