Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F17%3A43913383" target="_blank" >RIV/60461373:22310/17:43913383 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.sciencedirect.com/science/article/pii/S235294071730029X" target="_blank" >http://www.sciencedirect.com/science/article/pii/S235294071730029X</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apmt.2017.02.008" target="_blank" >10.1016/j.apmt.2017.02.008</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate

Popis výsledku v původním jazyce

In this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silver substrates by a novel &quot;combined&quot; two-step epitaxial procedure based on metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). The channel temperature was determined by high lateral and spectral resolution Raman spectroscopy. The characteristics of the structures were compared to those of conventional AlGaN/GaN layers deposited on sapphire. An improved heat dissipation in the metal substrate based HFETs leads to a significant decrease in channel temperature (-60% at 7 W/mm) and affects the long-term stability of the drain current (+2%) favorably in the whole range under investigation (up to 1000h). Metallic substrates are a viable solution toward highly reliable high -power devices and are beneficial to low power electronics as well, where the high integration density also calls for efficient heat dissipation.

Název v anglickém jazyce

Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate

Popis výsledku anglicky

In this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silver substrates by a novel &quot;combined&quot; two-step epitaxial procedure based on metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). The channel temperature was determined by high lateral and spectral resolution Raman spectroscopy. The characteristics of the structures were compared to those of conventional AlGaN/GaN layers deposited on sapphire. An improved heat dissipation in the metal substrate based HFETs leads to a significant decrease in channel temperature (-60% at 7 W/mm) and affects the long-term stability of the drain current (+2%) favorably in the whole range under investigation (up to 1000h). Metallic substrates are a viable solution toward highly reliable high -power devices and are beneficial to low power electronics as well, where the high integration density also calls for efficient heat dissipation.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/GA13-20507S" target="_blank" >GA13-20507S: Tenké vrstvy magneticky dopovaného GaN</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Materials Today

ISSN

2352-9407

e-ISSN

—

Svazek periodika

7

Číslo periodika v rámci svazku

JUN 2017

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

134-137

Kód UT WoS článku

000405594100013

EID výsledku v databázi Scopus

2-s2.0-85014943831