Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F21%3A43922158" target="_blank" >RIV/60461373:22310/21:43922158 - isvavai.cz</a>

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/1361-6641/ac1a28/pdf" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6641/ac1a28/pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6641/ac1a28" target="_blank" >10.1088/1361-6641/ac1a28</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Popis výsledku v původním jazyce

We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements performed on MISHFET devices reveal a local non-uniform distribution of strain in the source-gate recess-drain region. Furthermore, a reduction of compressive stress up to 0.3 GPa in GaN after gate recessing was experimentally determined. The local stress increases by similar to 0.1 GPa and similar to 0.2 GPa after the deposition of 4 and 6 nm thin AlN layers in the gate recessed structures, respectively. Additionally, an increase in sheet charge density in the devices under investigation from similar to 3.8 x 10(12) cm(-2) to 6.2 x 10(12) cm(-2) was evaluated by capacitance-voltage measurements. Therefore, strain engineering by applying amorphous AlN layers in gate recessed MISHFETs can significantly improve their device characteristics.

Název v anglickém jazyce

Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Popis výsledku anglicky

We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements performed on MISHFET devices reveal a local non-uniform distribution of strain in the source-gate recess-drain region. Furthermore, a reduction of compressive stress up to 0.3 GPa in GaN after gate recessing was experimentally determined. The local stress increases by similar to 0.1 GPa and similar to 0.2 GPa after the deposition of 4 and 6 nm thin AlN layers in the gate recessed structures, respectively. Additionally, an increase in sheet charge density in the devices under investigation from similar to 3.8 x 10(12) cm(-2) to 6.2 x 10(12) cm(-2) was evaluated by capacitance-voltage measurements. Therefore, strain engineering by applying amorphous AlN layers in gate recessed MISHFETs can significantly improve their device characteristics.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/LTAUSA19034" target="_blank" >LTAUSA19034: Dvoudimenzionální nanomateriály pro aplikace v elektronice</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

—

Svazek periodika

36

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

10

Strana od-do

—

Kód UT WoS článku

000688245200001

EID výsledku v databázi Scopus

2-s2.0-85114484643