Contact Angle Influence on Defects in Graphene Prepared by Segregation Method on Treated SiO2/Si Substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F21%3A43923269" target="_blank" >RIV/60461373:22310/21:43923269 - isvavai.cz</a>

Výsledek na webu

<a href="http://www.annexpublishers.com/articles/JMSN/9102-Contact-Angle-Influence-on-Defects.pdf" target="_blank" >http://www.annexpublishers.com/articles/JMSN/9102-Contact-Angle-Influence-on-Defects.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Contact Angle Influence on Defects in Graphene Prepared by Segregation Method on Treated SiO2/Si Substrate

Popis výsledku v původním jazyce

SiO2 /Si substrates were modified by physical and chemical treatments in order to improve adhesion and homogeneity of segregated graphene. The objective of this work was to decrease defects concentration in graphene crystallites in segregated graphene. It was done by chemical and physical treatment of the SiO2 substrate prior to deposition of catalytic nickel layer. By the experiments, it was shown that concentration of defects in graphene strongly increases with increasing contact angle. Graphene with lowest ID/IG ratio of Raman bands D and G, therefore highest quality, was prepared on substrates annealed in reduction atmosphere.

Název v anglickém jazyce

Contact Angle Influence on Defects in Graphene Prepared by Segregation Method on Treated SiO2/Si Substrate

Popis výsledku anglicky

SiO2 /Si substrates were modified by physical and chemical treatments in order to improve adhesion and homogeneity of segregated graphene. The objective of this work was to decrease defects concentration in graphene crystallites in segregated graphene. It was done by chemical and physical treatment of the SiO2 substrate prior to deposition of catalytic nickel layer. By the experiments, it was shown that concentration of defects in graphene strongly increases with increasing contact angle. Graphene with lowest ID/IG ratio of Raman bands D and G, therefore highest quality, was prepared on substrates annealed in reduction atmosphere.

Druh

J_ost - Ostatní články v recenzovaných periodicích

CEP obor

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OECD FORD obor

20501 - Materials engineering

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Science and Nanotechnology

ISSN

2348-9812

e-ISSN

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Svazek periodika

8

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

1-7

Kód UT WoS článku

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EID výsledku v databázi Scopus

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