Unraveling the Mechanism of the Persistent Photoconductivity in InSe and its Doped Counterparts

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F22%3A43924196" target="_blank" >RIV/60461373:22310/22:43924196 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/adom.202200522" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/adom.202200522</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/adom.202200522" target="_blank" >10.1002/adom.202200522</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Unraveling the Mechanism of the Persistent Photoconductivity in InSe and its Doped Counterparts

Popis výsledku v původním jazyce

Dopant levels in layered compound InSe have considerable potential in optoelectronic devices. Dopant-induced trap states are essential in determining the optoelectrical properties of semiconductors. However, detailed studies of the persistent photoconductivity (PPC) and related mechanism in doped InSe are still not available. Here, the dependence of excitation energy on the shallow donor level caused by the dopants (Ge, Sn) in InSe is systematically investigated. Notably, prolonged decay time originates from extrinsic Ge, Sn dopants and these doping-assisted states improve the optoelectrical performance of pristine InSe. Those photogenerated carriers are trapped in the Ge, Sn shallow impurities states, which are long-lived enough to be extracted into Au contacts before annihilation. This renders Ge-, Sn-doped InSe photoconductive gain and maximized photocurrent. Sn-doped InSe single crystal device can achieve a maximum responsivity of around 1.7 x 10(6) A W-1 under red light and detectivity of 6.18 x 10(13) Jones. In addition, Hall measurements identify the carrier concentration and the Hall mobility of pristine InSe is significantly changed by Ge and Sn dopants. It is demonstrated that doping Ge, Sn atoms is responsible for the obvious photoconductivity and beneficial for the high-performance photodetector, offering intriguing opportunities for novel holographic memory applications.

Název v anglickém jazyce

Unraveling the Mechanism of the Persistent Photoconductivity in InSe and its Doped Counterparts

Popis výsledku anglicky

Dopant levels in layered compound InSe have considerable potential in optoelectronic devices. Dopant-induced trap states are essential in determining the optoelectrical properties of semiconductors. However, detailed studies of the persistent photoconductivity (PPC) and related mechanism in doped InSe are still not available. Here, the dependence of excitation energy on the shallow donor level caused by the dopants (Ge, Sn) in InSe is systematically investigated. Notably, prolonged decay time originates from extrinsic Ge, Sn dopants and these doping-assisted states improve the optoelectrical performance of pristine InSe. Those photogenerated carriers are trapped in the Ge, Sn shallow impurities states, which are long-lived enough to be extracted into Au contacts before annihilation. This renders Ge-, Sn-doped InSe photoconductive gain and maximized photocurrent. Sn-doped InSe single crystal device can achieve a maximum responsivity of around 1.7 x 10(6) A W-1 under red light and detectivity of 6.18 x 10(13) Jones. In addition, Hall measurements identify the carrier concentration and the Hall mobility of pristine InSe is significantly changed by Ge and Sn dopants. It is demonstrated that doping Ge, Sn atoms is responsible for the obvious photoconductivity and beneficial for the high-performance photodetector, offering intriguing opportunities for novel holographic memory applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/LTAUSA19034" target="_blank" >LTAUSA19034: Dvoudimenzionální nanomateriály pro aplikace v elektronice</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced optical materials

ISSN

2195-1071

e-ISSN

—

Svazek periodika

10

Číslo periodika v rámci svazku

20

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

nestrankovano

Kód UT WoS článku

000832655300001

EID výsledku v databázi Scopus

2-s2.0-85135122001