GeSe-embedded metal-oxide double heterojunctions for facilitating self-biased and efficient NIR photodetection

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F24%3A43931491" target="_blank" >RIV/60461373:22310/24:43931491 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.rsc.org/en/content/articlelanding/2024/nr/d4nr03374d/unauth" target="_blank" >https://pubs.rsc.org/en/content/articlelanding/2024/nr/d4nr03374d/unauth</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/d4nr03374d" target="_blank" >10.1039/d4nr03374d</a>

Jazyk výsledku

angličtina

Název v původním jazyce

GeSe-embedded metal-oxide double heterojunctions for facilitating self-biased and efficient NIR photodetection

Popis výsledku v původním jazyce

Infrared radiation detection is significantly important in communication, imaging, and sensing fields. Here, we present the integration of germanium selenide (GeSe) with a metal-oxide heterojunction to achieve efficient near-infrared (850 nm) photodetection under zero bias conditions. Nickel oxide (NiO) and silicon (Si) formed a favorable energy band alignment for the efficient separation of photogenerated charge carriers, resulting in a high figure of merits. The additional incorporation of a germanium selenide (GeSe) interlayer between the nickel oxide (NiO) and silicon (Si) heterojunction improved the external responsivity (from 0.22 to 3300 mA W-1), detectivity (from 1.24 x 107 to 20 x 109 Jones), normalized photocurrent to dark current ratio (from 4 x 103 to 3 x 105 W-1), noise equivalent power (from nW to pW), and rise/fall time (from 34/34.5 ms to 14/13 ms). The interlayer introduction of a semiconductor in various heterojunctions can facilitate self-biased and broadband photodetection for widely used optoelectronic applications.

Název v anglickém jazyce

GeSe-embedded metal-oxide double heterojunctions for facilitating self-biased and efficient NIR photodetection

Popis výsledku anglicky

Infrared radiation detection is significantly important in communication, imaging, and sensing fields. Here, we present the integration of germanium selenide (GeSe) with a metal-oxide heterojunction to achieve efficient near-infrared (850 nm) photodetection under zero bias conditions. Nickel oxide (NiO) and silicon (Si) formed a favorable energy band alignment for the efficient separation of photogenerated charge carriers, resulting in a high figure of merits. The additional incorporation of a germanium selenide (GeSe) interlayer between the nickel oxide (NiO) and silicon (Si) heterojunction improved the external responsivity (from 0.22 to 3300 mA W-1), detectivity (from 1.24 x 107 to 20 x 109 Jones), normalized photocurrent to dark current ratio (from 4 x 103 to 3 x 105 W-1), noise equivalent power (from nW to pW), and rise/fall time (from 34/34.5 ms to 14/13 ms). The interlayer introduction of a semiconductor in various heterojunctions can facilitate self-biased and broadband photodetection for widely used optoelectronic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanoscale

ISSN

2040-3364

e-ISSN

2040-3372

Svazek periodika

16

Číslo periodika v rámci svazku

48

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

22267-22272

Kód UT WoS článku

001353053900001

EID výsledku v databázi Scopus

2-s2.0-85208790272