Self-Biased High-Responsivity Photodetector Based on a Bi2SeTe2 Topological Insulator

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F23%3A00578941" target="_blank" >RIV/61388955:_____/23:00578941 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/23:10473187

Výsledek na webu

<a href="https://hdl.handle.net/11104/0347850" target="_blank" >https://hdl.handle.net/11104/0347850</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsaelm.3c01195" target="_blank" >10.1021/acsaelm.3c01195</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Self-Biased High-Responsivity Photodetector Based on a Bi2SeTe2 Topological Insulator

Popis výsledku v původním jazyce

Topological insulators show promise for high-performance optoelectronic applications due to their nonlinear optical properties, broad spectral absorption, ultrafast response to optical excitation, and excellent thermoelectric properties. Here, we introduce a self-biased photodetector based on the topological insulator Bi2SeTe2, driven by the photothermoelectric effect. Operating without external bias, the photodetector delivers a competitive visible-range photoresponse reaching responsivity of ≈27 mA/W and detectivity of ≈2 × 109 Jones at 458 nm. Comparable to individual topological insulators as well as topological insulator-based heterojunctions, this underscores Bi2SeTe2’s potential, especially in scenarios where external power sources cannot be used. Its self-biased nature eliminates the need for an external bias, making it an ideal material for low-power and remote-sensing applications.

Název v anglickém jazyce

Self-Biased High-Responsivity Photodetector Based on a Bi2SeTe2 Topological Insulator

Popis výsledku anglicky

Topological insulators show promise for high-performance optoelectronic applications due to their nonlinear optical properties, broad spectral absorption, ultrafast response to optical excitation, and excellent thermoelectric properties. Here, we introduce a self-biased photodetector based on the topological insulator Bi2SeTe2, driven by the photothermoelectric effect. Operating without external bias, the photodetector delivers a competitive visible-range photoresponse reaching responsivity of ≈27 mA/W and detectivity of ≈2 × 109 Jones at 458 nm. Comparable to individual topological insulators as well as topological insulator-based heterojunctions, this underscores Bi2SeTe2’s potential, especially in scenarios where external power sources cannot be used. Its self-biased nature eliminates the need for an external bias, making it an ideal material for low-power and remote-sensing applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Electronic Materials

ISSN

2637-6113

e-ISSN

2637-6113

Svazek periodika

5

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

6697-6703

Kód UT WoS článku

001132930700001

EID výsledku v databázi Scopus

2-s2.0-85179790390