Silicon carbide detectors for diagnostics of laser-produced plasmas

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F19%3A00517693" target="_blank" >RIV/61389005:_____/19:00517693 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2527311" target="_blank" >http://dx.doi.org/10.1117/12.2527311</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2527311" target="_blank" >10.1117/12.2527311</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Silicon carbide detectors for diagnostics of laser-produced plasmas

Popis výsledku v původním jazyce

Recently developed silicon carbide (SiC) detectors have been employed to study pulsed laser plasmas produced by irradiation of a double-stream gas puff target with nanosecond laser pulses. The plasma emitted by a gas-puff target source in the soft X-ray (SXR, λ = 0.1 - 10 nm) and extreme ultraviolet (EUV, λ = 10 - 120 nm) ranges was monitored with silicon carbide (SiC) detectors and compared with a commercial, calibrated silicon (Si) photodiode (AXUV-HS1). Different filters have been used to select the emission in different wavelength ranges from the broad-band emission of the plasma. This work shows the applicability of SiC detectors to measure the SXR and EUV ns pulses from the plasma, useful for monitoring and optimizing the gas-puff laser-plasma sources developed at IOE-MUT, in Warsaw (Poland). Some aspects relative to the plasma stability as well as characterization of the plasma source (i.e. the overall evaluation of the signal and the time trace profile) will be presented and discussed.

Název v anglickém jazyce

Silicon carbide detectors for diagnostics of laser-produced plasmas

Popis výsledku anglicky

Recently developed silicon carbide (SiC) detectors have been employed to study pulsed laser plasmas produced by irradiation of a double-stream gas puff target with nanosecond laser pulses. The plasma emitted by a gas-puff target source in the soft X-ray (SXR, λ = 0.1 - 10 nm) and extreme ultraviolet (EUV, λ = 10 - 120 nm) ranges was monitored with silicon carbide (SiC) detectors and compared with a commercial, calibrated silicon (Si) photodiode (AXUV-HS1). Different filters have been used to select the emission in different wavelength ranges from the broad-band emission of the plasma. This work shows the applicability of SiC detectors to measure the SXR and EUV ns pulses from the plasma, useful for monitoring and optimizing the gas-puff laser-plasma sources developed at IOE-MUT, in Warsaw (Poland). Some aspects relative to the plasma stability as well as characterization of the plasma source (i.e. the overall evaluation of the signal and the time trace profile) will be presented and discussed.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10305 - Fluids and plasma physics (including surface physics)

Projekt

<a href="/cs/project/GA19-02804S" target="_blank" >GA19-02804S: Nanostrukturované heteropřechody pro chemirezistory</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of SPIE - The International Society for Optical Engineering

ISBN

9781510627307

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

7

Strana od-do

110320W

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

Praha

Datum konání akce

3. 4. 2019

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

000535354700025