Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389005%3A_____%2F20%3A00525015" target="_blank" >RIV/61389005:_____/20:00525015 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1088/1748-0221/15/05/C05027" target="_blank" >https://doi.org/10.1088/1748-0221/15/05/C05027</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/15/05/C05027" target="_blank" >10.1088/1748-0221/15/05/C05027</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Popis výsledku v původním jazyce

Silicon carbide detectors were employed to characterize the plasma produced by laser interaction with a double stream gas-puff target source. A 10 Hz repetition rate Nd:YAG laser (1064 nm wavelength, 0.69 J pulse energy and 3 ns pulse duration) was employed to irradiate different gas-puff targets (Argon, Xenon and Sulfur hexafluoride), at different pressures (1-10 bar), emitting plasma radiation in different wavelength ranges (ultraviolet, extreme ultraviolet and soft X-rays). The emission produced by the laser radiation was properly filtered (employing Titanium, Aluminium, Zirconium and Calcium fluoride filters), to narrow down the broad-band emission of the generated plasma. The SiC detectors' signals were compared with a calibrated traditional silicon detector evaluating their differences, i.e. taking into account the plasma stability, the time trace profile and the characteristics of the gas-puff target source. The obtained results, which will be presented and discussed, allow to improve the geometry and configuration of the SiC detectors avoiding saturation and charge recombination effects and getting a better proportionality to the energy and fluence of the detected radiations.

Název v anglickém jazyce

Characterization of Si and SiC detectors for laser-generated plasma monitoring in short wavelength range

Popis výsledku anglicky

Silicon carbide detectors were employed to characterize the plasma produced by laser interaction with a double stream gas-puff target source. A 10 Hz repetition rate Nd:YAG laser (1064 nm wavelength, 0.69 J pulse energy and 3 ns pulse duration) was employed to irradiate different gas-puff targets (Argon, Xenon and Sulfur hexafluoride), at different pressures (1-10 bar), emitting plasma radiation in different wavelength ranges (ultraviolet, extreme ultraviolet and soft X-rays). The emission produced by the laser radiation was properly filtered (employing Titanium, Aluminium, Zirconium and Calcium fluoride filters), to narrow down the broad-band emission of the generated plasma. The SiC detectors' signals were compared with a calibrated traditional silicon detector evaluating their differences, i.e. taking into account the plasma stability, the time trace profile and the characteristics of the gas-puff target source. The obtained results, which will be presented and discussed, allow to improve the geometry and configuration of the SiC detectors avoiding saturation and charge recombination effects and getting a better proportionality to the energy and fluence of the detected radiations.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

—

Svazek periodika

15

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

13

Strana od-do

C05027

Kód UT WoS článku

000534740600027

EID výsledku v databázi Scopus

2-s2.0-85085840692