Simple method for determination of the thickness of a nonabsorbing thin film using spectral reflectance measurement

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27350%2F09%3A00021679" target="_blank" >RIV/61989100:27350/09:00021679 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Simple method for determination of the thickness of a nonabsorbing thin film using spectral reflectance measurement

Popis výsledku v původním jazyce

A method to determine the thickness of a nonabsorbing thin film on an absorbing substrate is presented. A linear relation between the thin-film thickness and the tangent wavelength of the reflectance spectrum for a specific interference order is revealed, which permits the calculation of the thickness provided that the wavelength-dependent optical parameters of the thin film and the substrate are known. The thickness can be calculated precisely from the reflectance spectrum by using one extreme only, asis demonstrated theoretically for SiO2 thin film on a Si substrate. The application of this method is demonstrated experimentally for the same thin-film structure but with different Si substrates. The results are compared with those given by the algebraic fitting method, and very good agreement is confirmed.

Název v anglickém jazyce

Simple method for determination of the thickness of a nonabsorbing thin film using spectral reflectance measurement

Popis výsledku anglicky

A method to determine the thickness of a nonabsorbing thin film on an absorbing substrate is presented. A linear relation between the thin-film thickness and the tangent wavelength of the reflectance spectrum for a specific interference order is revealed, which permits the calculation of the thickness provided that the wavelength-dependent optical parameters of the thin film and the substrate are known. The thickness can be calculated precisely from the reflectance spectrum by using one extreme only, asis demonstrated theoretically for SiO2 thin film on a Si substrate. The application of this method is demonstrated experimentally for the same thin-film structure but with different Si substrates. The results are compared with those given by the algebraic fitting method, and very good agreement is confirmed.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Optics

ISSN

0003-6935

e-ISSN

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Svazek periodika

48

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

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Kód UT WoS článku

000264210900026

EID výsledku v databázi Scopus

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