The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27350%2F09%3A00021680" target="_blank" >RIV/61989100:27350/09:00021680 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry

Popis výsledku v původním jazyce

Techniques of spectral reflectometry and interferometry are used for measuring small changes in thickness of SiO2 thin film grown by thermal oxidation on different silicon substrates. A slightly dispersive Michelson interferometer with one of its mirrorsreplaced by a thin-film structure is used to measure the reflectance and interferometric phase of the thin-film structure at the same time. The experimental data are used to determine precisely the thickness of the SiO2 thin film on silicon wafers of two crystallographic orientations and different dopant concentrations.We confirmed very good agreement between the experimental data and theory and revealed that the thin-film thickness, which varies with the type of silicon substrate, depends linearly onthe wavelength at which minimum in the spectral reflectance occurs. Similar behaviour was revealed for the interferometric phase.

Název v anglickém jazyce

The effect of silicon substrate on thickness of SiO2 thin film analysed by spectral reflectometry and interferometry

Popis výsledku anglicky

Techniques of spectral reflectometry and interferometry are used for measuring small changes in thickness of SiO2 thin film grown by thermal oxidation on different silicon substrates. A slightly dispersive Michelson interferometer with one of its mirrorsreplaced by a thin-film structure is used to measure the reflectance and interferometric phase of the thin-film structure at the same time. The experimental data are used to determine precisely the thickness of the SiO2 thin film on silicon wafers of two crystallographic orientations and different dopant concentrations.We confirmed very good agreement between the experimental data and theory and revealed that the thin-film thickness, which varies with the type of silicon substrate, depends linearly onthe wavelength at which minimum in the spectral reflectance occurs. Similar behaviour was revealed for the interferometric phase.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

APPLIED PHYSICS B-LASERS AND OPTICS

ISSN

0946-2171

e-ISSN

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Svazek periodika

95

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

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Kód UT WoS článku

000266073200023

EID výsledku v databázi Scopus

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