In-situ spectroscopic ellipsometry of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on flexible Fe-Ni alloy substrate for photovoltaic applications
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27350%2F14%3A86090046" target="_blank" >RIV/61989100:27350/14:86090046 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/61989100:27740/14:86090046 RIV/61989100:27640/14:86090046
Výsledek na webu
<a href="http://www.sciencedirect.com/science/article/pii/S0040609014006531" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0040609014006531</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2014.06.009" target="_blank" >10.1016/j.tsf.2014.06.009</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
In-situ spectroscopic ellipsometry of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on flexible Fe-Ni alloy substrate for photovoltaic applications
Popis výsledku v původním jazyce
Crystallinity and material quality of hydrogenated microcrystalline silicon (?c-Si:H) films change during their growth, leading to a complex material structure. In order to identify the composition of those inhomogeneous films, deposited on iron-nickel (Fe-Ni) alloy substrates, in-situ ellipsometric data were taken during the thin film growth at regular time intervals. The analysis of the in-situ data taken at the photon energy range between 2.8 and 4.5 eV allowed us to identify the composition of the thin film surface as it grows. The time evolution of the crystalline and amorphous silicon fractions and the surface roughness shows clearly three important phases of the thin film growth: the initial growth of nanocone shaped crystals, the collision phase of neighboring crystals, and the semi-homogeneous material growth until the end of the deposition. The analysis of in-situ data taken during depositions on three different Fe-Ni alloy substrates with different crystal sizes and surface
Název v anglickém jazyce
In-situ spectroscopic ellipsometry of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on flexible Fe-Ni alloy substrate for photovoltaic applications
Popis výsledku anglicky
Crystallinity and material quality of hydrogenated microcrystalline silicon (?c-Si:H) films change during their growth, leading to a complex material structure. In order to identify the composition of those inhomogeneous films, deposited on iron-nickel (Fe-Ni) alloy substrates, in-situ ellipsometric data were taken during the thin film growth at regular time intervals. The analysis of the in-situ data taken at the photon energy range between 2.8 and 4.5 eV allowed us to identify the composition of the thin film surface as it grows. The time evolution of the crystalline and amorphous silicon fractions and the surface roughness shows clearly three important phases of the thin film growth: the initial growth of nanocone shaped crystals, the collision phase of neighboring crystals, and the semi-homogeneous material growth until the end of the deposition. The analysis of in-situ data taken during depositions on three different Fe-Ni alloy substrates with different crystal sizes and surface
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BH - Optika, masery a lasery
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/ED1.1.00%2F02.0070" target="_blank" >ED1.1.00/02.0070: Centrum excelence IT4Innovations</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2014
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Thin Solid Films
ISSN
0040-6090
e-ISSN
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Svazek periodika
571
Číslo periodika v rámci svazku
Neuvedeno
Stát vydavatele periodika
NL - Nizozemsko
Počet stran výsledku
7
Strana od-do
749-755
Kód UT WoS článku
000346055200078
EID výsledku v databázi Scopus
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