Crystalline composition of silicon deposited on a low-cost substrate for photovoltaic applications studied by in-situ spectroscopic ellipsometry

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27350%2F14%3A86090889" target="_blank" >RIV/61989100:27350/14:86090889 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61989100:27740/14:86090889 RIV/61989100:27640/14:86090889

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2176098" target="_blank" >http://dx.doi.org/10.1117/12.2176098</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2176098" target="_blank" >10.1117/12.2176098</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Crystalline composition of silicon deposited on a low-cost substrate for photovoltaic applications studied by in-situ spectroscopic ellipsometry

Popis výsledku v původním jazyce

This paper deals with the study of thin silicon films deposited by plasma-enhanced chemical vapor deposition on the industrial iron-nickel alloy substrate. This approach is promising for fabrication of low-cost high-efficiency solar cells. The main aim is to characterize the intrinsic hydrogenated microcrystalline silicon layer which fulfills its role of the absorber and has a direct impact on the solar cell performance. The real-time ellipsometric data obtained during the material deposition in the reactor are used to study the composition of the grown material. Based on the designed optical model, the evolution of the material crystallinity as well as the thickness and composition of the surface roughness layer are established in addition to an estimation of the average growth rate. Transmission electron microscopy was used to obtain the images of material structure and to verify conclusions of optical modeling.

Název v anglickém jazyce

Crystalline composition of silicon deposited on a low-cost substrate for photovoltaic applications studied by in-situ spectroscopic ellipsometry

Popis výsledku anglicky

This paper deals with the study of thin silicon films deposited by plasma-enhanced chemical vapor deposition on the industrial iron-nickel alloy substrate. This approach is promising for fabrication of low-cost high-efficiency solar cells. The main aim is to characterize the intrinsic hydrogenated microcrystalline silicon layer which fulfills its role of the absorber and has a direct impact on the solar cell performance. The real-time ellipsometric data obtained during the material deposition in the reactor are used to study the composition of the grown material. Based on the designed optical model, the evolution of the material crystallinity as well as the thickness and composition of the surface roughness layer are established in addition to an estimation of the average growth rate. Transmission electron microscopy was used to obtain the images of material structure and to verify conclusions of optical modeling.

Druh

D - Stať ve sborníku

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

—

Projekt

<a href="/cs/project/ED1.1.00%2F02.0070" target="_blank" >ED1.1.00/02.0070: Centrum excelence IT4Innovations</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of SPIE. Volume 9441

ISBN

978-1-62841-556-8

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

6

Strana od-do

"94411F"

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

Wojanow Palace

Datum konání akce

8. 9. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000349332600050