All-Dielectric Graphene-induced T-Slot Waveguide Electro-Optic Modulator With Polarization-Independent Operation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27640%2F21%3A10249583" target="_blank" >RIV/61989100:27640/21:10249583 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61989100:27740/21:10249583

Výsledek na webu

<a href="https://ieeexplore.ieee.org/document/9321550" target="_blank" >https://ieeexplore.ieee.org/document/9321550</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/JSTQE.2021.3050569" target="_blank" >10.1109/JSTQE.2021.3050569</a>

Jazyk výsledku

angličtina

Název v původním jazyce

All-Dielectric Graphene-induced T-Slot Waveguide Electro-Optic Modulator With Polarization-Independent Operation

Popis výsledku v původním jazyce

Developing efficient techniques to realize polarization-independent modulators nowadays is still important for on-chip photonic circuits. Here, we propose and theoretically demonstrate a graphene-based T-slot waveguide modulator, which simultaneously supports the TE and TM polarized modes, offering a greater possibility to achieve the polarization-independent modulation. The modulation performance is comprehensively studied in terms of attenuation loss, insertion loss, modulation depth, normalized mode area, bandwidth and power consumption. Optimizations of key characteristic parameters illustrate that the modulator not only offers a mode confinement beyond the diffraction limit (&lt;lambda(2)/12 and &lt;lambda(2)/8 for TM and TE modes, respectively), but also exhibits an outstanding performance with a modulation depth (MD) of &gt;0.35 dB/mu m, a insertion loss (IL) of &lt;0.1 dB/mu m and a MD discrepancy of &lt;0.012 dB/mu m for both polarized modes covering the whole S, C and L bands. Particularly, the modulator possesses a compact footprint of 11.6 mu m(2), a 3-dB modulation bandwidth of 50 GHz and a power consumption per bit of 2.07 pJ/bit based on theoretical predictions. The polarization-independent operation is also quite robust against the possible fabrication perturbations. Our work may inspire new potential for developing the integrated modulators and opto-electronic interconnects in the advanced polarization-diversity circuits.

Název v anglickém jazyce

All-Dielectric Graphene-induced T-Slot Waveguide Electro-Optic Modulator With Polarization-Independent Operation

Popis výsledku anglicky

Developing efficient techniques to realize polarization-independent modulators nowadays is still important for on-chip photonic circuits. Here, we propose and theoretically demonstrate a graphene-based T-slot waveguide modulator, which simultaneously supports the TE and TM polarized modes, offering a greater possibility to achieve the polarization-independent modulation. The modulation performance is comprehensively studied in terms of attenuation loss, insertion loss, modulation depth, normalized mode area, bandwidth and power consumption. Optimizations of key characteristic parameters illustrate that the modulator not only offers a mode confinement beyond the diffraction limit (&lt;lambda(2)/12 and &lt;lambda(2)/8 for TM and TE modes, respectively), but also exhibits an outstanding performance with a modulation depth (MD) of &gt;0.35 dB/mu m, a insertion loss (IL) of &lt;0.1 dB/mu m and a MD discrepancy of &lt;0.012 dB/mu m for both polarized modes covering the whole S, C and L bands. Particularly, the modulator possesses a compact footprint of 11.6 mu m(2), a 3-dB modulation bandwidth of 50 GHz and a power consumption per bit of 2.07 pJ/bit based on theoretical predictions. The polarization-independent operation is also quite robust against the possible fabrication perturbations. Our work may inspire new potential for developing the integrated modulators and opto-electronic interconnects in the advanced polarization-diversity circuits.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/EF16_013%2F0001791" target="_blank" >EF16_013/0001791: IT4Innovations národní superpočítačové centrum - cesta k exascale</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Journal on Selected Topics in Quantum Electronics

ISSN

1077-260X

e-ISSN

—

Svazek periodika

27

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

—

Kód UT WoS článku

000749847900001

EID výsledku v databázi Scopus

2-s2.0-85099569599