High-performance electronics and optoelectronics of monolayer tungsten diselenide full film from pre-seeding strategy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F21%3A10248251" target="_blank" >RIV/61989100:27710/21:10248251 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/inf2.12259" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/inf2.12259</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/inf2.12259" target="_blank" >10.1002/inf2.12259</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High-performance electronics and optoelectronics of monolayer tungsten diselenide full film from pre-seeding strategy

Popis výsledku v původním jazyce

Tungsten diselenide (WSe2) possesses extraordinary electronic properties for applications in electronics, optoelectronics, and emerging exciton physics. The synthesis of monolayer WSe2 film is of topmost for device arrays and integrated circuits. The monolayer WSe2 film has yet been reported by thermal chemical vapor deposition (CVD) approach, and the nucleation mechanism remains unclear. Here, we report a pre-seeding strategy for finely regulating the nuclei density at an early stage and achieving a fully covered film after chemical vapor deposition growth. The underlying mechanism is heterogeneous nucleation from the pre-seeding tungsten oxide nanoparticles. At first, we optimized the precursor concentration for pre-seeding. Besides, we confirmed the superiority of the pre-seeding method, compared with three types of substrate pretreatments, including nontreatment, sonication in an organic solvent, and oxygen plasma. Eventually, the high-quality synthetic WSe2 monolayer film exhibits excellent device performance in field-effect transistors and photodetectors. We extracted thermodynamic activation energy from the nucleation and growth data. Our results may shed light on the wafer-scale production of homogeneous monolayer films of WSe2, other 2D materials, and their van der Waals heterostructures.

Název v anglickém jazyce

High-performance electronics and optoelectronics of monolayer tungsten diselenide full film from pre-seeding strategy

Popis výsledku anglicky

Tungsten diselenide (WSe2) possesses extraordinary electronic properties for applications in electronics, optoelectronics, and emerging exciton physics. The synthesis of monolayer WSe2 film is of topmost for device arrays and integrated circuits. The monolayer WSe2 film has yet been reported by thermal chemical vapor deposition (CVD) approach, and the nucleation mechanism remains unclear. Here, we report a pre-seeding strategy for finely regulating the nuclei density at an early stage and achieving a fully covered film after chemical vapor deposition growth. The underlying mechanism is heterogeneous nucleation from the pre-seeding tungsten oxide nanoparticles. At first, we optimized the precursor concentration for pre-seeding. Besides, we confirmed the superiority of the pre-seeding method, compared with three types of substrate pretreatments, including nontreatment, sonication in an organic solvent, and oxygen plasma. Eventually, the high-quality synthetic WSe2 monolayer film exhibits excellent device performance in field-effect transistors and photodetectors. We extracted thermodynamic activation energy from the nucleation and growth data. Our results may shed light on the wafer-scale production of homogeneous monolayer films of WSe2, other 2D materials, and their van der Waals heterostructures.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

20400 - Chemical engineering

Projekt

<a href="/cs/project/EF16_019%2F0000853" target="_blank" >EF16_019/0000853: Institut environmentálních technologií - excelentní výzkum</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Infomat

ISSN

2567-3165

e-ISSN

—

Svazek periodika

3

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

15

Strana od-do

1455-1469

Kód UT WoS článku

000713758700001

EID výsledku v databázi Scopus

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