Periodical Ripening for MOCVD Growth of Large 2D Transition Metal Dichalcogenide Domains

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27710%2F23%3A10252890" target="_blank" >RIV/61989100:27710/23:10252890 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.webofscience.com/wos/woscc/full-record/WOS:000930133700001" target="_blank" >https://www.webofscience.com/wos/woscc/full-record/WOS:000930133700001</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/adfm.202212773" target="_blank" >10.1002/adfm.202212773</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Periodical Ripening for MOCVD Growth of Large 2D Transition Metal Dichalcogenide Domains

Popis výsledku v původním jazyce

2D semiconductors, especially 2D transition metal dichalcogenides (TMDCs), have attracted ever-growing attention toward extending Moore&apos;s law beyond silicon. Metal-organic chemical vapor deposition (MOCVD) has been widely considered as a scalable technique to achieve wafer-scale TMDC films for applications. However, current MOCVD process usually suffers from small domain size with only hundreds of nanometers, in which dense grain boundary defects degrade the crystalline quality of the films. Here, a periodical varying-temperature ripening (PVTR) process is demonstrated to grow wafer-scale high crystalline TMDC films by MOCVD. It is found that the high-temperature ripening significantly reduces the nucleation density and therefore enables single-crystal domain size over 20 µm. In this process, no additives or etchants are involved, which facilitates low impurity concentration in the grown films. Atom-resolved electron microscopy imaging, variable temperature photoluminescence (PL) spectroscopy, and electrical transport results further confirm comparable crystalline quality to those observed in mechanically exfoliated TMDC films. The research provides a scalable route to produce high-quality 2D semiconducting films for applications in electronics and optoelectronics.

Název v anglickém jazyce

Periodical Ripening for MOCVD Growth of Large 2D Transition Metal Dichalcogenide Domains

Popis výsledku anglicky

2D semiconductors, especially 2D transition metal dichalcogenides (TMDCs), have attracted ever-growing attention toward extending Moore&apos;s law beyond silicon. Metal-organic chemical vapor deposition (MOCVD) has been widely considered as a scalable technique to achieve wafer-scale TMDC films for applications. However, current MOCVD process usually suffers from small domain size with only hundreds of nanometers, in which dense grain boundary defects degrade the crystalline quality of the films. Here, a periodical varying-temperature ripening (PVTR) process is demonstrated to grow wafer-scale high crystalline TMDC films by MOCVD. It is found that the high-temperature ripening significantly reduces the nucleation density and therefore enables single-crystal domain size over 20 µm. In this process, no additives or etchants are involved, which facilitates low impurity concentration in the grown films. Atom-resolved electron microscopy imaging, variable temperature photoluminescence (PL) spectroscopy, and electrical transport results further confirm comparable crystalline quality to those observed in mechanically exfoliated TMDC films. The research provides a scalable route to produce high-quality 2D semiconducting films for applications in electronics and optoelectronics.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10400 - Chemical sciences

Projekt

<a href="/cs/project/EF16_019%2F0000853" target="_blank" >EF16_019/0000853: Institut environmentálních technologií - excelentní výzkum</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Functional Materials

ISSN

1616-301X

e-ISSN

—

Svazek periodika

33

Číslo periodika v rámci svazku

18

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

10

Strana od-do

1-10

Kód UT WoS článku

000930133700001

EID výsledku v databázi Scopus

2-s2.0-85148008500