TEA CO2 Pulsed Laser Deposition of Silicon Suboxide Films.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F01%3A27013035" target="_blank" >RIV/67985858:_____/01:27013035 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

TEA CO2 Pulsed Laser Deposition of Silicon Suboxide Films.

Popis výsledku v původním jazyce

The growth of silicon suboxide films (SiOx, x < 2) by pulsed TEA CO2 laser ablation of SiO target at low substrate temperatures (less than or equal to 425 degreesC) in vacuum is reported. To understand the wavenumber shift of the asymmetric stretching band v(Si-O) with temperature the subbands obtained by fitting of infrared spectra using X-ray photoelectron data were located and studied. The structural properties of deposited films were investigated. Since relative concentration of oxygen is almost constant and relative concentration of elemental silicon and SiO2 in the films increases with the substrate temperature the shift of asymmetric stretching band v(Si-O) can be explained by rearrangement and relaxation processes in the films and/or by movingof oxygen atoms from Si2O, SiO and Si2O3 to Si and SiO2 silicon species creating the films.

Název v anglickém jazyce

TEA CO2 Pulsed Laser Deposition of Silicon Suboxide Films.

Popis výsledku anglicky

The growth of silicon suboxide films (SiOx, x < 2) by pulsed TEA CO2 laser ablation of SiO target at low substrate temperatures (less than or equal to 425 degreesC) in vacuum is reported. To understand the wavenumber shift of the asymmetric stretching band v(Si-O) with temperature the subbands obtained by fitting of infrared spectra using X-ray photoelectron data were located and studied. The structural properties of deposited films were investigated. Since relative concentration of oxygen is almost constant and relative concentration of elemental silicon and SiO2 in the films increases with the substrate temperature the shift of asymmetric stretching band v(Si-O) can be explained by rearrangement and relaxation processes in the films and/or by movingof oxygen atoms from Si2O, SiO and Si2O3 to Si and SiO2 silicon species creating the films.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CH - Jaderná a kvantová chemie, fotochemie

OECD FORD obor

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Projekt

<a href="/cs/project/GA203%2F00%2F1288" target="_blank" >GA203/00/1288: Laserová ablace a chemie oxidu křemnatého</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2001

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Non-Crystalline Solids

ISSN

0022-3093

e-ISSN

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Svazek periodika

288

Číslo periodika v rámci svazku

1-3

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

30-36

Kód UT WoS článku

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EID výsledku v databázi Scopus

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