Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F09%3A00330687" target="_blank" >RIV/67985858:_____/09:00330687 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61388980:_____/09:00330687

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment

Popis výsledku v původním jazyce

Germanium Nanowires (GeNWs) were synthesized by Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 at temperature of 490 {degree sign}C and pressure of 90-100 Pa. GeNWs of several nanometers in diameter and a few microns in length were deposited onto various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Influence of surface pretreatment of the substrates (roughening of surface or Ge sputtering) is discussed in respect to the previously published theory of GeNW growth through the intermetallic alloy mechanism. The results conclude that another mechanism should be taken into account - the non-catalyst mechanism. Ge seeds necessary for triggering GeNW growth are formed by aggregation of Ge atoms/atom clusters/fragments which are stuck onto the substrate surface at the beginning of the process. The non-catalyst growth of GeNW triggered by such mechanism can be applied in growing GeNWs on semiconductors and insulators.

Název v anglickém jazyce

Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment

Popis výsledku anglicky

Germanium Nanowires (GeNWs) were synthesized by Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 at temperature of 490 {degree sign}C and pressure of 90-100 Pa. GeNWs of several nanometers in diameter and a few microns in length were deposited onto various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Influence of surface pretreatment of the substrates (roughening of surface or Ge sputtering) is discussed in respect to the previously published theory of GeNW growth through the intermetallic alloy mechanism. The results conclude that another mechanism should be taken into account - the non-catalyst mechanism. Ge seeds necessary for triggering GeNW growth are formed by aggregation of Ge atoms/atom clusters/fragments which are stuck onto the substrate surface at the beginning of the process. The non-catalyst growth of GeNW triggered by such mechanism can be applied in growing GeNWs on semiconductors and insulators.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CH - Jaderná a kvantová chemie, fotochemie

OECD FORD obor

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Projekt

<a href="/cs/project/GA203%2F09%2F1088" target="_blank" >GA203/09/1088: Příprava nanostrukturovaných Si/Ge/C depozitů</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ECS Transactions

ISSN

1938-5862

e-ISSN

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Svazek periodika

25

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

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Kód UT WoS článku

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EID výsledku v databázi Scopus

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