Deposition of Germanium Nanowires from Hexamethyldigermane: Influence of the Substrate Pretreatment

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985858%3A_____%2F10%3A00346428" target="_blank" >RIV/67985858:_____/10:00346428 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61388980:_____/10:00346428

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Deposition of Germanium Nanowires from Hexamethyldigermane: Influence of the Substrate Pretreatment

Popis výsledku v původním jazyce

Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 was used for synthesis of Germanium Nanowires (GeNWs). Pressure during the deposition process was maintained at 90-100 Pa and temperature fixed at 490 °C. GeNWs of several nanometers in diameter and a few microns in length were deposited on various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Si and SiO2 substrates were modified by sputtering Ge to promote GeNW growth. Influence of surface pretreatment (surfaceroughness or Ge sputtering) is discussed in respect to the previous published theory of intermetalic solution. The results conclude that another mechanism should be taken into account ? sticking of oncoming Ge based fragments, clusters etc. on the substrate surface, their nucleation and formation of Ge seeds appropriate for initiation of the GeNW growth. Samples were studied by SEM with EDX, (HR)TEM, FTIR and Raman spectroscopy.

Název v anglickém jazyce

Deposition of Germanium Nanowires from Hexamethyldigermane: Influence of the Substrate Pretreatment

Popis výsledku anglicky

Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 was used for synthesis of Germanium Nanowires (GeNWs). Pressure during the deposition process was maintained at 90-100 Pa and temperature fixed at 490 °C. GeNWs of several nanometers in diameter and a few microns in length were deposited on various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Si and SiO2 substrates were modified by sputtering Ge to promote GeNW growth. Influence of surface pretreatment (surfaceroughness or Ge sputtering) is discussed in respect to the previous published theory of intermetalic solution. The results conclude that another mechanism should be taken into account ? sticking of oncoming Ge based fragments, clusters etc. on the substrate surface, their nucleation and formation of Ge seeds appropriate for initiation of the GeNW growth. Samples were studied by SEM with EDX, (HR)TEM, FTIR and Raman spectroscopy.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CF - Fyzikální chemie a teoretická chemie

OECD FORD obor

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Projekt

<a href="/cs/project/GA203%2F09%2F1088" target="_blank" >GA203/09/1088: Příprava nanostrukturovaných Si/Ge/C depozitů</a><br>

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of the Electrochemical Society

ISSN

0013-4651

e-ISSN

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Svazek periodika

157

Číslo periodika v rámci svazku

10

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

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Kód UT WoS článku

000281306900094

EID výsledku v databázi Scopus

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