STUDY OF ELECTROPHORETIC DEPOSITION OF Pd METAL NANOPARTICLES ON InP AND GaN CRYSTAL SEMICONDUCTORS FOR H2 GAS SENSORS

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F10%3A00356058" target="_blank" >RIV/67985882:_____/10:00356058 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Jazyk výsledku
angličtina
Název v původním jazyce
STUDY OF ELECTROPHORETIC DEPOSITION OF Pd METAL NANOPARTICLES ON InP AND GaN CRYSTAL SEMICONDUCTORS FOR H2 GAS SENSORS
Popis výsledku v původním jazyce
Deposition of Pd nanoparticles (NPs) on InP or GaN single crystal wafer was performed from isooctane colloid solution. Diodes were prepared by making Schottky contact with colloidal graphite on Pd NPs partly coated surface and ohmic contact on the blankside of the wafer. It was found that several ppb of hydrogen in nitrogen gas can be detected by monitoring the change of diode current at a constant bias voltage. Diodes made on GaN were about ten times more sensitive to hydrogen than those made on InP.
Název v anglickém jazyce
STUDY OF ELECTROPHORETIC DEPOSITION OF Pd METAL NANOPARTICLES ON InP AND GaN CRYSTAL SEMICONDUCTORS FOR H2 GAS SENSORS
Popis výsledku anglicky
Deposition of Pd nanoparticles (NPs) on InP or GaN single crystal wafer was performed from isooctane colloid solution. Diodes were prepared by making Schottky contact with colloidal graphite on Pd NPs partly coated surface and ohmic contact on the blankside of the wafer. It was found that several ppb of hydrogen in nitrogen gas can be detected by monitoring the change of diode current at a constant bias voltage. Diodes made on GaN were about ten times more sensitive to hydrogen than those made on InP.

Rok uplatnění
2010
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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