EPD of reverse micelle Pd and Pt nanoparticles onto InP and GaN for high-response hydrogen sensors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F12%3A00369352" target="_blank" >RIV/68407700:21340/12:00369352 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/12:00374462

Výsledek na webu

<a href="https://doi.org/10.4028/www.scientific.net/KEM.507.169" target="_blank" >https://doi.org/10.4028/www.scientific.net/KEM.507.169</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/KEM.507.169" target="_blank" >10.4028/www.scientific.net/KEM.507.169</a>

Jazyk výsledku

angličtina

Název v původním jazyce

EPD of reverse micelle Pd and Pt nanoparticles onto InP and GaN for high-response hydrogen sensors

Popis výsledku v původním jazyce

We investigated properties of nanolayers electrophoretically deposited (EPD) onto semiconductor indium phosphide (InP) or gallium nitride (GaN) single crystals from colloid solutions of metal palladium (Pd), platinum (Pt) or bimetallic Pd/Pt nanoparticles (NPs) in isooctane. Colloids with metal NPs were prepared by reaction of metal compounds with the reducing agent hydrazine in water confined to reverse micelles of surfactant AOT.. Chopped DC electric voltage was applied for the time period to deposit metal NPs, only partly covering surface of the wafer. The deposits were image-observed by scanning electron microscopy (SEM)..Diodes with porous Schottky contacts were made by printing colloidal graphite on the NPs deposited surface and making ohmic contact on the blank side of the wafer. The diodes showed current-voltage characteristics of excellent rectification ratio and barrier height values close to Schottky-Mott limit, which was an evidence of negligible Fermi level pinning. Large increase of current was observed after switching on a flow of gas blend hydrogen in nitrogen (H-2/N-2). The diodes were measured with various H-2/N-2 in the range from 1000 ppm to 1 ppm of H-2. Current change ratios about 10(6) and about 10 were achieved with 1000 ppm and 1 ppm H-2/N-2.

Název v anglickém jazyce

EPD of reverse micelle Pd and Pt nanoparticles onto InP and GaN for high-response hydrogen sensors

Popis výsledku anglicky

We investigated properties of nanolayers electrophoretically deposited (EPD) onto semiconductor indium phosphide (InP) or gallium nitride (GaN) single crystals from colloid solutions of metal palladium (Pd), platinum (Pt) or bimetallic Pd/Pt nanoparticles (NPs) in isooctane. Colloids with metal NPs were prepared by reaction of metal compounds with the reducing agent hydrazine in water confined to reverse micelles of surfactant AOT.. Chopped DC electric voltage was applied for the time period to deposit metal NPs, only partly covering surface of the wafer. The deposits were image-observed by scanning electron microscopy (SEM)..Diodes with porous Schottky contacts were made by printing colloidal graphite on the NPs deposited surface and making ohmic contact on the blank side of the wafer. The diodes showed current-voltage characteristics of excellent rectification ratio and barrier height values close to Schottky-Mott limit, which was an evidence of negligible Fermi level pinning. Large increase of current was observed after switching on a flow of gas blend hydrogen in nitrogen (H-2/N-2). The diodes were measured with various H-2/N-2 in the range from 1000 ppm to 1 ppm of H-2. Current change ratios about 10(6) and about 10 were achieved with 1000 ppm and 1 ppm H-2/N-2.

Druh

C - Kapitola v odborné knize

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název knihy nebo sborníku

Electrophoretic Deposition: Fundamentals and Applications IV

ISBN

978-3-03785-379-5

Počet stran výsledku

5

Strana od-do

169-173

Počet stran knihy

260

Název nakladatele

Trans Tech Publications

Místo vydání

Durnten-Zurich

Kód UT WoS kapitoly

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