Hydrogen Sensors Made on InP or GaN with Electrophoretically Deposited Pd or Pt Nanoparticles

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F12%3A00369485" target="_blank" >RIV/68407700:21340/12:00369485 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/12:00387579

Výsledek na webu

<a href="https://doi.org/10.12693/APhysPolA.122.572" target="_blank" >https://doi.org/10.12693/APhysPolA.122.572</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.12693/APhysPolA.122.572" target="_blank" >10.12693/APhysPolA.122.572</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Hydrogen Sensors Made on InP or GaN with Electrophoretically Deposited Pd or Pt Nanoparticles

Popis výsledku v původním jazyce

High quality Schottky diodes were prepared by printing colloidal graphite on the polished wafers of n-type InP or n-type GaN. The wafers were earlier sparsely covered with palladium or platinum nanoparticles by electrophoresis from prepared colloid solutions in isooctane. Deposited contacts and nanoparticles were observed by scanning electron mictroscopy. Current voltage characteristics of the Schottky diodes showed high rectification ratios and the barrier heights close to the value of vacuum-level-alignment of the Schottky-Mott limit. The sensitivity to hydrogen of the diodes was measured in the flow of hydrogen/nitrogen mixtures of various hydrogen concentrations in the range from 1 ppm to 1000 ppm. The estimated detection limits of the diodes were in the sub-ppm range. The diodes represent orders-of-magnitude improvement over the best hydrogen sensors reported previously.

Název v anglickém jazyce

Hydrogen Sensors Made on InP or GaN with Electrophoretically Deposited Pd or Pt Nanoparticles

Popis výsledku anglicky

High quality Schottky diodes were prepared by printing colloidal graphite on the polished wafers of n-type InP or n-type GaN. The wafers were earlier sparsely covered with palladium or platinum nanoparticles by electrophoresis from prepared colloid solutions in isooctane. Deposited contacts and nanoparticles were observed by scanning electron mictroscopy. Current voltage characteristics of the Schottky diodes showed high rectification ratios and the barrier heights close to the value of vacuum-level-alignment of the Schottky-Mott limit. The sensitivity to hydrogen of the diodes was measured in the flow of hydrogen/nitrogen mixtures of various hydrogen concentrations in the range from 1 ppm to 1000 ppm. The estimated detection limits of the diodes were in the sub-ppm range. The diodes represent orders-of-magnitude improvement over the best hydrogen sensors reported previously.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Acta Physica Polonica A

ISSN

0587-4246

e-ISSN

1898-794X

Svazek periodika

122

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

PL - Polská republika

Počet stran výsledku

4

Strana od-do

572-575

Kód UT WoS článku

000309019200038

EID výsledku v databázi Scopus

2-s2.0-84865846325