Graphite Schottky barriers on n-InP and n-GaN with deposited Pd, Pt or bimetallic Pd/Pt nanoparticles for H2 sensing

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00190643" target="_blank" >RIV/68407700:21340/11:00190643 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/11:00374578

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Graphite Schottky barriers on n-InP and n-GaN with deposited Pd, Pt or bimetallic Pd/Pt nanoparticles for H2 sensing

Popis výsledku v původním jazyce

High Schottky barriers have been achieved by applying colloidal graphite on n-type InP and on n-type GaN semiconductor crystal wafers. The barrier heights were shown to be close to Schottky-Mott limit ad thermionic emission theory. Porous properties of the graphite Schottky contacts were demonstrated by scanning electron microscopy. Besides, on the semiconductors, prior to the graphite, sub-monolayers of platinum group catalytic metals were deposited by electrophoresis from colloid solutions. The Schottky contacts along with ohmic contacts prepared on the other site of the wafers formed diodes with high rectification ratios and low reverse leakage currents. Diodes were tested on sensitivity to hydrogen by measuring current after alternative exposure to0.1 % hydrogen/nitrogen blend and air Hydrogen sensing was improved by several orders-of-magnitude over the best results reported previously. Diodes with bimetal Pd/Pt (2:1) nanoparticles were compared with those containing Pd or Pt nano

Název v anglickém jazyce

Graphite Schottky barriers on n-InP and n-GaN with deposited Pd, Pt or bimetallic Pd/Pt nanoparticles for H2 sensing

Popis výsledku anglicky

High Schottky barriers have been achieved by applying colloidal graphite on n-type InP and on n-type GaN semiconductor crystal wafers. The barrier heights were shown to be close to Schottky-Mott limit ad thermionic emission theory. Porous properties of the graphite Schottky contacts were demonstrated by scanning electron microscopy. Besides, on the semiconductors, prior to the graphite, sub-monolayers of platinum group catalytic metals were deposited by electrophoresis from colloid solutions. The Schottky contacts along with ohmic contacts prepared on the other site of the wafers formed diodes with high rectification ratios and low reverse leakage currents. Diodes were tested on sensitivity to hydrogen by measuring current after alternative exposure to0.1 % hydrogen/nitrogen blend and air Hydrogen sensing was improved by several orders-of-magnitude over the best results reported previously. Diodes with bimetal Pd/Pt (2:1) nanoparticles were compared with those containing Pd or Pt nano

Druh

D - Stať ve sborníku

CEP obor

JB - Senzory, čidla, měření a regulace

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2011 - Conference Proceedings

ISBN

978-80-87294-27-7

ISSN

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e-ISSN

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Počet stran výsledku

7

Strana od-do

51-57

Název nakladatele

TANGER spol. s r.o.

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

21. 9. 2011

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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