Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F11%3A00368040" target="_blank" >RIV/67985882:_____/11:00368040 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1186/1556-276X-6-490" target="_blank" >http://dx.doi.org/10.1186/1556-276X-6-490</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1186/1556-276X-6-490" target="_blank" >10.1186/1556-276X-6-490</a>

Jazyk výsledku
angličtina
Název v původním jazyce
Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
Popis výsledku v původním jazyce
Depositions of Pd nanoparticles (NPs) were performed on surfaces of semiconductor wafers of InP and GaN from isooctane colloid solutions with reverse micelles. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs. Large increase of current was observed after exposing voltage biased diodes to flow of hydrogen and nitrogen blend, representing more than two orders-of-magnitude improvement over the best results reported up to now.
Název v anglickém jazyce
Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
Popis výsledku anglicky
Depositions of Pd nanoparticles (NPs) were performed on surfaces of semiconductor wafers of InP and GaN from isooctane colloid solutions with reverse micelles. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs. Large increase of current was observed after exposing voltage biased diodes to flow of hydrogen and nitrogen blend, representing more than two orders-of-magnitude improvement over the best results reported up to now.

Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
JA - Elektronika a optoelektronika, elektrotechnika
OECD FORD obor
—

Projekt
<a href="/cs/project/OC10021" target="_blank" >OC10021: Výzkum kovových nanočástic elektroforeticky deponovaných na polovodičové sloučeniny III-V-N</a><br>
Návaznosti
Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění
2011
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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