ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F25%3A00618619" target="_blank" >RIV/67985882:_____/25:00618619 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1039/D5NR00321K" target="_blank" >https://doi.org/10.1039/D5NR00321K</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/d5nr00321k" target="_blank" >10.1039/d5nr00321k</a>

Jazyk výsledku

angličtina

Název v původním jazyce

ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Popis výsledku v původním jazyce

Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based on arrays of GaN nanowires require that the nucleation layer is electrically conductive and optically nontransparent to prevent the absorption of generated light in the Si substrate. This study reports the molecular beam epitaxial growth of GaN nanowires on ZrN nucleation layers sputtered on sapphire and demonstrates that ZrN provides ohmic contact to dense vertical arrays of n-type GaN nanowires. The ohmic nature of the ZrN/n-type GaN nanowire contact is evidenced by the measurement of the current-voltage characteristics of individual as-grown nanowires using nanomanipulators in a scanning electron microscope. The limitations and advantages of single-nanowire measurements are discussed, and approaches to overcome these limitations are proposed. The feasibility of this concept is demonstrated by the measurement of single nanowires with a p-n junction, exhibiting highly rectifying characteristics

Název v anglickém jazyce

ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires

Popis výsledku anglicky

Self-assembled GaN nanowires are typically grown on Si substrates with convenient nucleation layers. Light-emitting devices based on arrays of GaN nanowires require that the nucleation layer is electrically conductive and optically nontransparent to prevent the absorption of generated light in the Si substrate. This study reports the molecular beam epitaxial growth of GaN nanowires on ZrN nucleation layers sputtered on sapphire and demonstrates that ZrN provides ohmic contact to dense vertical arrays of n-type GaN nanowires. The ohmic nature of the ZrN/n-type GaN nanowire contact is evidenced by the measurement of the current-voltage characteristics of individual as-grown nanowires using nanomanipulators in a scanning electron microscope. The limitations and advantages of single-nanowire measurements are discussed, and approaches to overcome these limitations are proposed. The feasibility of this concept is demonstrated by the measurement of single nanowires with a p-n junction, exhibiting highly rectifying characteristics

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/GF23-07585K" target="_blank" >GF23-07585K: Heterostruktury nanodrátů ZnO/(Al,Ga)N pro optoelektroniku</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanoscale

ISSN

2040-3364

e-ISSN

2040-3372

Svazek periodika

17

Číslo periodika v rámci svazku

13

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

8111-8117

Kód UT WoS článku

001436835300001

EID výsledku v databázi Scopus

2-s2.0-105001829594