Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F23%3A00576333" target="_blank" >RIV/68081723:_____/23:00576333 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26620/23:PU149496

Výsledek na webu

<a href="https://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-well" target="_blank" >https://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-well</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0165066" target="_blank" >10.1063/5.0165066</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Popis výsledku v původním jazyce

Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopt ing a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemicalnetching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. Thendegree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constantnwith the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was dem onstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosificationnwas achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under thenhighest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the com bination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formednsmall V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs.

Název v anglickém jazyce

Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation

Popis výsledku anglicky

Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopt ing a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemicalnetching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. Thendegree of strain relaxation in MQWs was studied by x-ray reciprocal space mapping, which shows an increase of the in-plane lattice constantnwith the increase of etching voltage used in fabricating the pseudo-substrate. The reduced strain in the InGaN SL pseudo-substrate was dem onstrated to be transferable to InGaN MQWs grown on top of it, and the engineering of the degree of strain relaxation via porosificationnwas achieved. The highest relaxation degree of 44.7% was achieved in the sample with the porous InGaN SL template etched under thenhighest etching voltage. Morphological and structural properties of partially relaxed InGaN MQWs samples were investigated with the com bination of atomic force and transmission electron microscopy. The increased porosity of the InGaN SL template and the newly formednsmall V-pits during QW growth are suggested as possible origins for the increased strain relaxation of InGaN MQWs.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LM2018110" target="_blank" >LM2018110: Výzkumná infrastruktura CzechNanoLab</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

1089-7550

Svazek periodika

134

Číslo periodika v rámci svazku

14

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

145102

Kód UT WoS článku

001083993400005

EID výsledku v databázi Scopus

2-s2.0-85174829301