SEM acquired electronic contrast of doped areas in semiconductors and its interpretation.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F02%3A12020095" target="_blank" >RIV/68081731:_____/02:12020095 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

SEM acquired electronic contrast of doped areas in semiconductors and its interpretation.

Popis výsledku v původním jazyce

New experimental data are reviewed that throw more light on explanation of the electronic contrast, mediated by secondary electrons in the SEM and visualizing the doped areas in semiconductors. Observation of p.sup.+./sup. doped patterns on the n-type Si(111) was made in cathode lens equipped very low energy SEM both under UHV and standard vacuum conditions. Further, the same structure was examined in the Auger electron spectrometer with a scanned primary beam. Data were obtained for the as-inserted specimen aswell as for that in-situ cleaned by a ion beam. When interpreting the observations, the structure was found not to behave as a clean crystal with the local differences in the inner potential compensated via above-surface patch fields but, on contrary, underlined is the role of subsurface fields, generated by semiconductor-contaminantion or semiconductor-layer contacts.

Název v anglickém jazyce

SEM acquired electronic contrast of doped areas in semiconductors and its interpretation.

Popis výsledku anglicky

New experimental data are reviewed that throw more light on explanation of the electronic contrast, mediated by secondary electrons in the SEM and visualizing the doped areas in semiconductors. Observation of p.sup.+./sup. doped patterns on the n-type Si(111) was made in cathode lens equipped very low energy SEM both under UHV and standard vacuum conditions. Further, the same structure was examined in the Auger electron spectrometer with a scanned primary beam. Data were obtained for the as-inserted specimen aswell as for that in-situ cleaned by a ion beam. When interpreting the observations, the structure was found not to behave as a clean crystal with the local differences in the inner potential compensated via above-surface patch fields but, on contrary, underlined is the role of subsurface fields, generated by semiconductor-contaminantion or semiconductor-layer contacts.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/IAA1065901" target="_blank" >IAA1065901: Vlnově optické kontrasty v rastrovacím elektronovém mikroskopu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2002

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of seminar on nanotechnology for fabrication of hybrid materials.

ISBN

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ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

9-12

Název nakladatele

JPJSMA

Místo vydání

Toyama

Místo konání akce

Toyama [JP]

Datum konání akce

6. 11. 2002

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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