Metodika mikroskopie pomalými elektrony s katodovou čočkou
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F05%3A00047353" target="_blank" >RIV/68081731:_____/05:00047353 - isvavai.cz</a>
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Methodology of slow electron microscopy with cathode lens
Popis výsledku v původním jazyce
Conventional scanning electron microscope with the primary electron beam of energy 10 keV or more is equipped by the cathode lens with the sample serving as the cathode. In the field of the cathode lens the primary beam, already formed and focused, is retarded to an arbitrarily low energy, and in the same field the emitted electrons are accelerated and collimated toward optical axis. The cathode lens is completed with a detector of the signal beam, situated either above the objective lens or below it, and in the later case combined with anode of the cathode lens. Correcting effect of the cathode lens reduces significantly aberrations of the assembly and enables one to achieve image resolution in units of nanometers for the electron landing energy evenin the range of units of electronvolts.
Název v anglickém jazyce
Methodology of slow electron microscopy with cathode lens
Popis výsledku anglicky
Conventional scanning electron microscope with the primary electron beam of energy 10 keV or more is equipped by the cathode lens with the sample serving as the cathode. In the field of the cathode lens the primary beam, already formed and focused, is retarded to an arbitrarily low energy, and in the same field the emitted electrons are accelerated and collimated toward optical axis. The cathode lens is completed with a detector of the signal beam, situated either above the objective lens or below it, and in the later case combined with anode of the cathode lens. Correcting effect of the cathode lens reduces significantly aberrations of the assembly and enables one to achieve image resolution in units of nanometers for the electron landing energy evenin the range of units of electronvolts.
Klasifikace
Druh
X - Nezařazeno
CEP obor
JA - Elektronika a optoelektronika, elektrotechnika
OECD FORD obor
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Návaznosti výsledku
Projekt
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Návaznosti
Z - Vyzkumny zamer (s odkazem do CEZ)
Ostatní
Rok uplatnění
2005
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů