Conjugated Silicon?Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F10%3A00341918" target="_blank" >RIV/68081731:_____/10:00341918 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/70883521:28140/10:63509541

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Conjugated Silicon?Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes

Popis výsledku v původním jazyce

The comparison of the susceptibility of aryl-substituted polysilanes to the photodegradation by electron beam (EB) and UV radiation is examined on the prototypical material, poly[methyl(phenyl)silylene] (PMPSi). The main purpose of this paper is to compare the photoluminescence (PL) and cathodoluminescence (CL) after major degradation, predominantly in the long wavelength range of 400?600 nm, studying the disorder due to dangling bonds, conformational transformations and weak bonds created by the degradation process. The UV degradation was a completely reversible process, whereas the EB degradation process was only reversible, provided certain material specific level of degradation was not exceeded. This observation supports different paths and final states in both UV and EB degradations. The results serve for the optimization of polysilane nanoresists.

Název v anglickém jazyce

Conjugated Silicon?Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes

Popis výsledku anglicky

The comparison of the susceptibility of aryl-substituted polysilanes to the photodegradation by electron beam (EB) and UV radiation is examined on the prototypical material, poly[methyl(phenyl)silylene] (PMPSi). The main purpose of this paper is to compare the photoluminescence (PL) and cathodoluminescence (CL) after major degradation, predominantly in the long wavelength range of 400?600 nm, studying the disorder due to dangling bonds, conformational transformations and weak bonds created by the degradation process. The UV degradation was a completely reversible process, whereas the EB degradation process was only reversible, provided certain material specific level of degradation was not exceeded. This observation supports different paths and final states in both UV and EB degradations. The results serve for the optimization of polysilane nanoresists.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/IAA100100622" target="_blank" >IAA100100622: KONJUGOVANÉ KŘEMÍKOVÉ POLYMERY PRO REZISTY V NANOTECHNOLOGIÍCH</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials Transactions

ISSN

1345-9678

e-ISSN

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Svazek periodika

51

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

JP - Japonsko

Počet stran výsledku

5

Strana od-do

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Kód UT WoS článku

000276538900001

EID výsledku v databázi Scopus

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