Mapping of dopants in silicon by injection of electrons

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Mapping of dopants in silicon by injection of electrons

Popis výsledku v původním jazyce

Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability hasbeen verified and the method was extended to very low energies where dynamical changes in the contrast have been observed.

Název v anglickém jazyce

Mapping of dopants in silicon by injection of electrons

Popis výsledku anglicky

Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability hasbeen verified and the method was extended to very low energies where dynamical changes in the contrast have been observed.

Druh

O - Ostatní výsledky

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů