Scanning Probe Microscopy: Measuring on Hard Surfaces

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Scanning Probe Microscopy: Measuring on Hard Surfaces

Popis výsledku v původním jazyce

During a measurement by scanning probe microscopy (SPM) an image artifacts can appear in a measurement data. The source of image artifacts during an SPM measurement could be in parts of the SPM tool: mechanical system, piezoelectric crystal, scanner electronic. However, the main source of image artifact is the probe tip geometry and properties of the sample. For example, probe wearing, which occurs during the contact measurement on a sample with a hard surface, could result in heavy probe shape change,causing probe-related image artifacts. Measurement could appear problematic on a sample with periodical relief structure (e.g. gratings with sub 10 ?m periodicity) prepared in hard materials (e.g. silicon), when the structure height is greater than about500 nm. In this case, probe can easily get struck during the scanning, on the hard surface as well as at the high aspect ratio relief structure, causing image artifact thus reducing measurement quality.

Název v anglickém jazyce

Scanning Probe Microscopy: Measuring on Hard Surfaces

Popis výsledku anglicky

During a measurement by scanning probe microscopy (SPM) an image artifacts can appear in a measurement data. The source of image artifacts during an SPM measurement could be in parts of the SPM tool: mechanical system, piezoelectric crystal, scanner electronic. However, the main source of image artifact is the probe tip geometry and properties of the sample. For example, probe wearing, which occurs during the contact measurement on a sample with a hard surface, could result in heavy probe shape change,causing probe-related image artifacts. Measurement could appear problematic on a sample with periodical relief structure (e.g. gratings with sub 10 ?m periodicity) prepared in hard materials (e.g. silicon), when the structure height is greater than about500 nm. In this case, probe can easily get struck during the scanning, on the hard surface as well as at the high aspect ratio relief structure, causing image artifact thus reducing measurement quality.

Druh

D - Stať ve sborníku

CEP obor

JP - Průmyslové procesy a zpracování

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2011. 3rd International Conference

ISBN

978-80-87294-27-7

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

701-704

Název nakladatele

Tanger spol. s r. o

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

21. 9. 2011

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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