Ultra-low-energy STEM in SEM

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F14%3A00434106" target="_blank" >RIV/68081731:_____/14:00434106 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Ultra-low-energy STEM in SEM

Popis výsledku v původním jazyce

Examination of thin samples in TEM or STEM has been performed at hundreds of keV. This energy range offered high resolution but low contrasts which meant that tissue sections had to be contrasted with heavy metal salts. Recent TEM with aberration correctors preserve an acceptable resolution down to 20 keV and provide enhanced contrasts. The LVTEM device is operated at 5 keV on samples thinner than 20 nm. STEM attachments to SEMs have become widespread [3] profiting from an image contrast substantially increasing even for light elements at tens or units of keV. The methods for the preparation of ultrathin sections of various substances are capable of producing layers at and even below 10 nm which enables one to further decrease the energy of the electrons provided the image resolution is maintained. When using the STEM technique virtually all transmitted electrons can be utilised for imaging, while in TEM we are restricted to using electrons capable of forming the final image at accepta

Název v anglickém jazyce

Ultra-low-energy STEM in SEM

Popis výsledku anglicky

Examination of thin samples in TEM or STEM has been performed at hundreds of keV. This energy range offered high resolution but low contrasts which meant that tissue sections had to be contrasted with heavy metal salts. Recent TEM with aberration correctors preserve an acceptable resolution down to 20 keV and provide enhanced contrasts. The LVTEM device is operated at 5 keV on samples thinner than 20 nm. STEM attachments to SEMs have become widespread [3] profiting from an image contrast substantially increasing even for light elements at tens or units of keV. The methods for the preparation of ultrathin sections of various substances are capable of producing layers at and even below 10 nm which enables one to further decrease the energy of the electrons provided the image resolution is maintained. When using the STEM technique virtually all transmitted electrons can be utilised for imaging, while in TEM we are restricted to using electrons capable of forming the final image at accepta

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/TE01020118" target="_blank" >TE01020118: Elektronová mikroskopie</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

18th International Microscopy Congres. Proceedings

ISBN

978-80-260-6720-7

ISSN

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e-ISSN

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Počet stran výsledku

2

Strana od-do

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Název nakladatele

Czechoslovak Microscopy Society

Místo vydání

Praha

Místo konání akce

Praha

Datum konání akce

7. 9. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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