Scanning low-and very low energy electron microscopy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F15%3A00450822" target="_blank" >RIV/68081731:_____/15:00450822 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Scanning low-and very low energy electron microscopy

Popis výsledku v původním jazyce

Scanning low energy electron microscopy (SLEEM) allows imaging samples with a good lateral resolution using electrons of an arbitrarily low energy. This is achieved by means of the Cathode Lens, which is essentially a decelerating electrostatic field inserted just before the electron beam hits the sample. The technique allows both for a reflection and a transmission mode and energies down to zero electron volts. The region of very low electron energies (below 50 eV) offers some interesting phenomena that are not encountered at the usual energies of a few units to tens of keV that are employed in ordinary scanning electron microscopes. To name but a few: Reflectivity of very slow electrons in the very low energy range can be correlated with the electronic structure of the material which in turn is related to the crystallographic orientation of the sample. This fact has been successfully used for the extraction of crystallographic orientation related information in polycrystalline metals

Název v anglickém jazyce

Scanning low-and very low energy electron microscopy

Popis výsledku anglicky

Scanning low energy electron microscopy (SLEEM) allows imaging samples with a good lateral resolution using electrons of an arbitrarily low energy. This is achieved by means of the Cathode Lens, which is essentially a decelerating electrostatic field inserted just before the electron beam hits the sample. The technique allows both for a reflection and a transmission mode and energies down to zero electron volts. The region of very low electron energies (below 50 eV) offers some interesting phenomena that are not encountered at the usual energies of a few units to tens of keV that are employed in ordinary scanning electron microscopes. To name but a few: Reflectivity of very slow electrons in the very low energy range can be correlated with the electronic structure of the material which in turn is related to the crystallographic orientation of the sample. This fact has been successfully used for the extraction of crystallographic orientation related information in polycrystalline metals

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/TE01020118" target="_blank" >TE01020118: Elektronová mikroskopie</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

12th Multinational Congress on Microscopy

ISBN

978-963-05-9653-4

ISSN

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e-ISSN

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Počet stran výsledku

3

Strana od-do

218-220

Název nakladatele

Akadémiai Kiadó

Místo vydání

Budapest

Místo konání akce

Eger

Datum konání akce

23. 8. 2015

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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