Determination of Crystallographic Information by Means of Very Low Energy Electron Imaging

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081731%3A_____%2F24%3A00588163" target="_blank" >RIV/68081731:_____/24:00588163 - isvavai.cz</a>

Výsledek na webu

<a href="https://jjp.yu.edu.jo/index.php/jjp/article/view/336" target="_blank" >https://jjp.yu.edu.jo/index.php/jjp/article/view/336</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.47011/17.2.10" target="_blank" >10.47011/17.2.10</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Determination of Crystallographic Information by Means of Very Low Energy Electron Imaging

Popis výsledku v původním jazyce

The present work explores the possibility of using scanning low energy electron microscopy (SLEEM) to obtain crystallographic orientation information from the variation in very low energy (0-50 eV) electron reflectivity. SLEEM is a scanning microscopy technique that allows imaging with electrons at arbitrarily low incident energies while preserving very good image resolution. As the incident electron energy changes in the very low energy range of tens of eV and less, the image signal of reflected electrons varies. Since the reflectivity of very low energy electrons in the range of 0–30 eV correlates with the crystal structure normal to the surface of the material, it can be used to determine the crystallographic orientation with nanoscale resolution.

Název v anglickém jazyce

Determination of Crystallographic Information by Means of Very Low Energy Electron Imaging

Popis výsledku anglicky

The present work explores the possibility of using scanning low energy electron microscopy (SLEEM) to obtain crystallographic orientation information from the variation in very low energy (0-50 eV) electron reflectivity. SLEEM is a scanning microscopy technique that allows imaging with electrons at arbitrarily low incident energies while preserving very good image resolution. As the incident electron energy changes in the very low energy range of tens of eV and less, the image signal of reflected electrons varies. Since the reflectivity of very low energy electrons in the range of 0–30 eV correlates with the crystal structure normal to the surface of the material, it can be used to determine the crystallographic orientation with nanoscale resolution.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Jordan Journal of Physics

ISSN

1994-7607

e-ISSN

1994-7615

Svazek periodika

17

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

JO - Jordánské hášimovské království

Počet stran výsledku

12

Strana od-do

233-244

Kód UT WoS článku

001282328100010

EID výsledku v databázi Scopus

2-s2.0-85199955893