Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties.

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F03%3A49033147" target="_blank" >RIV/68378271:_____/03:49033147 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/61389005:_____/03:49033147 RIV/49777513:23520/03:00000007

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties.

Popis výsledku v původním jazyce

Si-C-N films were deposited on p-type Si(I 0 0) substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were controlled by the silicon fraction (5-80%) in the erosion target area for a 50% N-2+50% Ar gas mixture and by the argon concentration (0-75%) in the gas mixture at a fixed 40% silicon fraction in the erosion target area. The total pressure and the discharge current on the magnetron target were held constant at p = 0.5 Pa and I-m = I A, the substrate temperature was adjusted at T-s = 600 degreesC by an ohmic heater and the r.f. induced negative substrate bias voltage, U-b was -500 V The films, typically 1.0-1.5 mum thick, werefound to be amorphous with a very smooth surface (R(a)less than or equal to0.8 nm) and good adhesion to substrates. It was shown that not only the composition of the C-Si target but also the nitrogen-argon gas mixture composition makes it

Název v anglickém jazyce

Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties.

Popis výsledku anglicky

Si-C-N films were deposited on p-type Si(I 0 0) substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were controlled by the silicon fraction (5-80%) in the erosion target area for a 50% N-2+50% Ar gas mixture and by the argon concentration (0-75%) in the gas mixture at a fixed 40% silicon fraction in the erosion target area. The total pressure and the discharge current on the magnetron target were held constant at p = 0.5 Pa and I-m = I A, the substrate temperature was adjusted at T-s = 600 degreesC by an ohmic heater and the r.f. induced negative substrate bias voltage, U-b was -500 V The films, typically 1.0-1.5 mum thick, werefound to be amorphous with a very smooth surface (R(a)less than or equal to0.8 nm) and good adhesion to substrates. It was shown that not only the composition of the C-Si target but also the nitrogen-argon gas mixture composition makes it

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BG - Jaderná, atomová a molekulová fyzika, urychlovače

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2003

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

DIAMOND AND RELATED MATERIALS

ISSN

0925-9635

e-ISSN

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Svazek periodika

12

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

7

Strana od-do

1287-1294

Kód UT WoS článku

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EID výsledku v databázi Scopus

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